Atomic layer deposition precursor step repetition and surface plasma pretreatment influence on semiconductor–insulator–semiconductor heterojunction solar cell

Abstract

Semiconductor–insulator–semiconductor heterojunction solar cells were prepared using atomic layer deposition (ALD) technique. The silicon surface was treated with oxygen and hydrogen plasma in different orders before dielectric layer deposition. A plasma-enhanced ALD process was applied to deposit dielectric Al2O3 on the plasma pretreated n-type Si(100) substrate. Aluminum doped zinc oxide (Al:ZnO or AZO) was deposited by thermal ALD and serves as transparent conductive oxide. Based on transmission electron microscopy studies the presence of thin silicon oxide (SiOx) layer was detected at the Si/Al2O3 interface. The SiOx formation depends on the initial growth behavior of Al2O3 and has significant influence on solar cell parameters. The authors demonstrate that a hydrogen plasma pretreatment and a precursor dose step repetition of a single precursor improve the initial growth behavior of Al2O3 and avoid the SiOx generation. Furthermore, it improves the solar cell performance, which indicates a change of the Si/Al2O3 interface states.

Preparation and Characterization of Carbon-Silicon Hybrid Nanostructures

“…Бактигерей 2,3 , О.М. Задерко 4 1 Київський національний університет імені Тараса Шевченка, вул. Володимирська, 64, 01601 Київ, Україна У статті ми описуємо особливості будови гібридних наноструктур вуглець-кремній (Si@C).…”

“…Nanosilicon and silicon nanoparticles (Si NPs) [1][2][3][4] are the objects of increased scientific interest to be used as new photonic and electronic materials [1,5], for example, in solar cells [2,3], including the formation of semiconductor-insulator-semiconductor heterojunction solar cells [4]. Some valuable studies were performed to measure photoluminescence induced by ultraviolet irradiation and electroluminescence emission of Si NPs [5][6][7].…”

Inhibition of Crystal Growth during Plasma Enhanced Atomic Layer Deposition by Applying BIAS

“…Room temperature deposition is enabled by highly reactive species generated in the plasma, such as radicals, ions, electrons, and photons. By controlling their flux and energy, film properties can be tailored for specific applications [ 23 , 25 , 26 , 27 , 28 ]. In remote inductively coupled plasma (remote-ICP), the plasma properties, such as ion energy distribution function (IEDF), electron temperature ( T e ), ion and electron density ( n i and n e , respectively) depend mainly on plasma gas pressure and composition, applied plasma power and the chamber configuration.…”