Atomic layer-deposited tunnel oxide stabilizes silicon photoanodes for water oxidation

Chen, Yi Wei; Prange, Jonathan D.; Dühnen, Simon; Yohan, Park; Gunji, Marika; Chidsey, Christopher E. D.; McIntyre, Paul C.

doi:10.1038/nmat3047

Cited by 696 publications

(807 citation statements)

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“…30 (6) designing surface passivation layers that chemically or physically protect the semiconductor from corrosion 31 and (7) reducing the rate of electron-hole recombination by surface state passivation 32 or by surface catalyst layers.…”

Section: 8mentioning

confidence: 99%

Enhanced photoelectrochemical water-splitting performance of semiconductors by surface passivation layers

Zheng

Spurgeon

et al. 2014

Energy Environ. Sci.

554

439

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An important approach for solving the world's sustainable energy challenges is the conversion of solar energy to chemical fuels. Semiconductors can be used to convert/store solar energy to chemical bonds in an energy-dense fuel. Photoelectrochemical (PEC) water-splitting cells, with semiconductor electrodes, use sunlight and water to generate hydrogen. Herein, recent studies on improving the efficiency of semiconductor-based solar water-splitting devices by the introduction of surface passivation layers are reviewed. We show that passivation layers have been used as an effective strategy to improve the charge-separation and transfer processes across semiconductor-liquid interfaces, and thereby increase overall solar energy conversion efficiencies. We also summarize the demonstrated passivation effects brought by these thin layers, which include reducing charge recombination at surface states, increasing the reaction kinetics, and protecting the semiconductor from chemical corrosion.These benefits of passivation layers play a crucial role in achieving highly efficient water-splitting devices in the near future. Broader contextSemiconductor interface is one of the most important components/regions in photoelectrochemical (PEC) water splitting devices. The serious surface charge recombination, slow charge transfer kinetics and the poor photoelectrochemical stability are the three main challenges for the practical PEC water splitting devices. Recently, the studies of constructing passivation layer onto the semiconductor to address these challenges have attracted increasing research attentions, due to the potential application of solar to chemical energy conversion. When these layers incorporated onto semiconductor surface, signicant changes of the interface would be found including charge transfer improvement, surface charge recombination, and chemical corrosion, etc. Although various strategies have been suggested for this surface modication, a synergetic effect must be achieved on an advanced photoelectrodes accounting for the improved solar-tohydrogen efficiencies. This review will shed light on the recent PEC water splitting work surface state passivation, corrosion retardation and charge transfer improvement in this passivation layer.

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Section: 8mentioning

confidence: 99%

Enhanced photoelectrochemical water-splitting performance of semiconductors by surface passivation layers

Zheng

Spurgeon

et al. 2014

Energy Environ. Sci.

554

439

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“…1,2,[7][8][9][10][11][12][13] Incorporation of such protection layers into the MIS junction, however, has compromised the photovoltages commonly reported for these devices. An ideal MIS junction using silicon has a theoretical maximum open circuit voltage of 700-800 mV.…”

Section: Introduction: Metal-insulator-semiconductor (Mis) Structuresmentioning

confidence: 99%

Isolating the Photovoltaic Junction: Atomic Layer Deposited TiO₂–RuO₂ Alloy Schottky Contacts for Silicon Photoanodes

Hendricks¹,

Scheuermann²,

Schmidt

et al. 2016

ACS Appl. Mater. Interfaces

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Access to the full text of the published version may require a subscription. Embargo information Access to this article is restricted until 12 months after publication by the request of the publisher. Just Accepted "Just Accepted" manuscripts have been peer-reviewed and accepted for publication. They are posted online prior to technical editing, formatting for publication and author proofing. The American Chemical Society provides "Just Accepted" as a free service to the research community to expedite the dissemination of scientific material as soon as possible after acceptance. "Just Accepted" manuscripts appear in full in PDF format accompanied by an HTML abstract. "Just Accepted" manuscripts have been fully peer reviewed, but should not be considered the official version of record. They are accessible to all readers and citable by the Digital Object Identifier (DOI®). "Just Accepted" is an optional service offered to authors. Therefore, the "Just Accepted" Web site may not include all articles that will be published in the journal. After a manuscript is technically edited and formatted, it will be removed from the "Just Accepted" Web site and published as an ASAP article. Note that technical editing may introduce minor changes to the manuscript text and/or graphics which could affect content, and all legal disclaimers and ethical guidelines that apply to the journal pertain. ACS cannot be held responsible for errors or consequences arising from the use of information contained in these "Just Accepted" manuscripts. 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 2 transport is measured as film thickness increases from 3 to 45 nm for alloy compositions ≥ 16% Rights Embargo lift dateRu. Silicon photoanodes with a 2 nm surface SiO 2 layer that are coated by these alloy Schottky contacts having compositions in the range of 13-46% RuO 2 exhibit average photovoltages of 525 mV, with a maximum photovoltage of 570 mV achieved. Depositing TiO 2 -RuO 2 alloys on nSi sets a high effective work function for the Schottky junction with the semiconductor substrate, thus generating a large photovoltage that is isolated from the properties of an overlying oxygen evolution catalyst or protection layer.

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“…This latter option addresses the issue of stability that pertains to most integrated solution-contacted semiconductor structures. Other than TMOs, only a few semiconductors, including the group VI transition metal dichalcogenides [9,10], and oxide-film protected electrodes [11][12][13][14][15][16][17], are stable in aqueous electrolytes.…”

Section: Introductionmentioning

confidence: 99%

Operando Analyses of Solar Fuels Light Absorbers and Catalysts

Lewerenz

Lichterman

Richter

et al. 2016

Electrochimica Acta

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Operando synchrotron radiation photoelectron spectroscopy (SRPES) in the tender X-ray energy range has been used to obtain information on the energy-band relations of semiconductor and metal-covered semiconductor surfaces while in direct contact with aqueous electrolytes under potentiostatic control. The system that was investigated consists of highly doped Si substrates 2 that were conformally coated with ~70 nm titania films produced by atomic-layer deposition.The TiO 2 /electrolyte and the Si/TiO 2 /Ni electrolyte interfaces were then analyzed by synchrotron radiation photoelectron spectroscopy. The PES data provided a determination of the flat-band position and identified regions of applied potential in which Fermi level pinning, depletion, or accumulation conditions occurred. Operando X-ray absorption spectroscopy (XAS) techniques were additionally used to investigate the properties of heterogeneous electrocatalysts for the oxygen-evolution reaction. Operando XAS including the pre-edge, edge and EXAFS regions allowed the development of a detailed picture of the catalysts under operating conditions, and elucidated the changes that in the physical and electronic structure of the catalyst that accompanied increases in the applied potential. Specifically, XAS data, combined with DFT studies, indicated that the activity of the electrocatalyst correlated with the formation of Fe dopant sites in γ-NiOOH.

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Atomic layer-deposited tunnel oxide stabilizes silicon photoanodes for water oxidation

Cited by 696 publications

References 29 publications

Enhanced photoelectrochemical water-splitting performance of semiconductors by surface passivation layers

Enhanced photoelectrochemical water-splitting performance of semiconductors by surface passivation layers

Isolating the Photovoltaic Junction: Atomic Layer Deposited TiO₂–RuO₂ Alloy Schottky Contacts for Silicon Photoanodes

Operando Analyses of Solar Fuels Light Absorbers and Catalysts

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Atomic layer-deposited tunnel oxide stabilizes silicon photoanodes for water oxidation

Cited by 696 publications

References 29 publications

Enhanced photoelectrochemical water-splitting performance of semiconductors by surface passivation layers

Enhanced photoelectrochemical water-splitting performance of semiconductors by surface passivation layers

Isolating the Photovoltaic Junction: Atomic Layer Deposited TiO2–RuO2 Alloy Schottky Contacts for Silicon Photoanodes

Operando Analyses of Solar Fuels Light Absorbers and Catalysts

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Isolating the Photovoltaic Junction: Atomic Layer Deposited TiO₂–RuO₂ Alloy Schottky Contacts for Silicon Photoanodes