Assessment of a new p-MOSFET usable as a doserate insensitive gamma dose sensor

Vettese, F.; Donichak, C.; Bourgeault, P.; Sarrabayrouse, G.

doi:10.1109/radecs.1995.509822

Cited by 1 publication

(1 citation statement)

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“…The threshold voltage shift during irradiation was tracked at a fixed output drain current. The reference drain current   r D I and the gate biases were approximately chosen at the "Zero Temperature Coefficient (ZTC) point" [7]. All measurements were performed with a drain bias…”

Section: Experimental Conditionsmentioning

confidence: 99%

Calibration and electric characterization of p-MNOS RADFETs at different dose rates and temperatures

Zimin

Mrozovskaya

Chubunov

et al. 2019

Nuclear Instruments and Methods in Physics Research Section A:

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This paper describes the radiation response and I-V characteristics of the stacked p-MNOS based RADFETs measured at different dose rates and irradiation temperatures. It is shown that the enhanced charge trapping takes place at the interface of the thick gate dielectrics in the MNOS transistors at low dose rates (ELDRS). The sensitivity of the radiation effect to irradiation temperature has also experimentally revealed. We associate both effects with the temperature and dose rate dependence of the effective charge yield in the thick oxides described within the framework of the previously proposed model. We have also simulated the I-V characteristics of the transistors for different total doses and irradiation conditions. It has been found the used electric and radiation models qualitatively and semi-quantitatively describe the observed dependencies of the RADFETs' sensitivity on dose rates and irradiation temperatures for the devices with different thickness of insulators.

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Section: Experimental Conditionsmentioning

confidence: 99%