Assessing Radiation Hardness of Silicon Photonic Sensors

Ahmed, Zeeshan; Cumberland, Lonnie T.; Klimov, Nikolai N.; Pazos, Ileana M.; Tosh, R; Fitzgerald, R.

doi:10.1038/s41598-018-31286-9

Cited by 26 publications

(4 citation statements)

References 25 publications

(21 reference statements)

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The latter in thermometers is usually referred to as robustness-a sought-after quality in the research and development stage. For example, Ahmed et al [34] recently demonstrated that silicon photonic thermometers can withstand up to 1 megagray of γ-radiation without showing any changes in device characteristics such as peak center, peak width, free spectral range, and temperature sensitivity. • Construction (or packaging) is one of the key factors in the development of thermometers as there exist two conflicting requirements: exposing the sensor to a temperature stimulus, while protecting it (and its interface electronics) from everything else (typically referred to as environmental damage).…”

Section: Performance Metrics For Selecting An Emerging Temperature Se...mentioning

confidence: 99%

Emerging technologies in the field of thermometry

Dedyulin

Ahmed²,

Machin³

2022

Meas. Sci. Technol.

View full text Add to dashboard Cite

The past decade saw the emergence of new temperature sensors that have the potential to disrupt a century-old measurement infrastructure based on resistance thermometry. In this review we present an overview of emerging technologies that are either in the earliest stages of metrological assessment or in the earliest stages of commercial development and thus merit further consideration by the measurement community. The following emerging technologies are reviewed: Johnson noise thermometry, optical refractive-index gas thermometry, Doppler line broadening thermometry, optomechanical thermometry, ﬁber-coupled phosphor thermometry, ﬁber-optic thermometry based on Rayleigh, Brillouin and Raman scattering, ﬁber-Bragg-grating thermometry, Bragg-waveguide-grating thermometry, ring-resonator thermometry, and photonic-crystal-cavity thermometry. For each emerging technology, we explain the working principle, highlight the best known performance, list advantages and drawbacks of the new temperature sensor and present possibilities for future developments.

show abstract

Section: Performance Metrics For Selecting An Emerging Temperature Se...mentioning

confidence: 99%

Emerging technologies in the field of thermometry

Dedyulin

Ahmed²,

Machin³

2022

Meas. Sci. Technol.

View full text Add to dashboard Cite

show abstract

“…Space radiation is composed of two primary groups: cosmic rays of electromagnetic wave packets and radiation particles (protons, electrons, and heavy ions) reaching extremely high kinetic energy (16). Ground radiation tests of Si PICs have been focusing on single-frequency γray (10 6 eV) (19)(20)(21)(22) and x-ray (10 4 eV) exposure of passive devices (19,(23)(24)(25), with dosage equivalent to 10 3 years of exposure on low earth orbit (LEO). The high dosage of such electromagnetic radiation results in primary TIDs in Si-on-insulator (SOI) substrate and reduces the tuning efficiency (23,25,26).…”

Section: Introductionmentioning

confidence: 99%

Space-qualifying silicon photonic modulators and circuits

Mao,

Chang,

Lee

et al. 2024

Sci. Adv.

View full text Add to dashboard Cite

Reducing the form factor while retaining the radiation hardness and performance matrix is the goal of avionics. While a compromise between a transistor’s size and its radiation hardness has reached consensus in microelectronics, the size-performance balance for their optical counterparts has not been quested but eventually will limit the spaceborne photonic instruments’ capacity to weight ratio. Here, we performed space experiments of photonic integrated circuits (PICs), revealing the critical roles of energetic charged particles. The year-long cosmic radiation exposure does not change carrier mobility but reduces free carrier lifetime, resulting in unchanged electro-optic modulation efficiency and well-expanded optoelectronic bandwidth. The diversity and statistics of the tested PIC modulator indicate the minimal requirement of shielding for PIC transmitters with small footprint modulators and complexed routing waveguides toward lightweight space terminals for terabits communications and intersatellite ranging.

show abstract

“…Miniaturization, reduced power consumption and tolerance to mechanical stimulus of photonic sensors and optoelectronic devices based on a-SiO 2 or a-Si 3 N 4 have motivated their use in ion accelerators, nuclear power plants or aerospace applications [11,12]. However, their performance in ionizing radiation environments can degrade due to a change in density, refractive index or covalent bond breaking [11,13] that leads to optical loses [14] and current leakage [12]. a-SiO 2 has been studied under a wide range of radiation conditions, and to a lesser extent a-Si 3 N 4 , yet it appears that a-Si 3 N 4 is more radiation resistant than a-SiO 2 (as discussed in the introductory part in [15]).…”

Section: Introductionmentioning

confidence: 99%

Characterisation of silicon oxynitride thin films and their response to swift heavy-ion irradiation

Mota‐Santiago¹,

Nadzri²,

Kremer³

et al. 2022

J. Phys. D: Appl. Phys.

View full text Add to dashboard Cite

Silicon oxynitrides (a-SiOxNy) are materials whose composition ranges between two binary materials: a-SiO2 and a-Si3N4. In this work, we present a systematic study of the fine structure of the damaged regions produced by swift heavy-ions (SHIs), or ‘ion-tracks’ and quantify the density variation profiles with respect to composition. Thin films were deposited by plasma-enhanced chemical vapor deposition (CVD), where thickness, density, stoichiometry and bond configuration were initially determined. The fine structure and radial size of the ion tracks was determined using small angle X-ray scattering. The tracks exhibit a core-shell cylindrical geometry, with an under-dense core surrounded by an over-dense shell with a smooth transition between the two regions. We observed two trends with composition: a constant increasing ion track radius is observed when the O/Si ratio is below one (0≤x≤1). And saturation of the radial dimensions above this value, being similar to a-SiO2. The IR spectra allowed to quantify the bond configuration and its evolution with fluence. After irradiation, the energy deposited by the SHI irradiation leads to a preferential damage of Si-N bonds. IR spectroscopy also showed the formation of new Si-H bonds with increasing fluences and resulting in a rather complex ion-induced structural modification of the a-SiOxNy network.

show abstract

Assessing Radiation Hardness of Silicon Photonic Sensors

Cited by 26 publications

References 25 publications

Emerging technologies in the field of thermometry

Emerging technologies in the field of thermometry

Space-qualifying silicon photonic modulators and circuits

Characterisation of silicon oxynitride thin films and their response to swift heavy-ion irradiation

Contact Info

Product

Resources

About