Thermoelectric materials could play an increasing role for the effi cient use of energy resources and waste heat recovery in the future. The thermoelectric effi ciency of materials is described by the fi gure of merit ZT = ( S 2 σ T )/ κ ( S Seebeck coeffi cient, σ electrical conductivity, κ thermal conductivity, and T absolute temperature). In recent years, several groups worldwide have been able to experimentally prove the enhancement of the thermoelectric effi ciency by reduction of the thermal conductivity due to phonon blocking at nanostructured interfaces. This review addresses recent developments from thermoelectric model systems, e.g. nanowires, nanoscale meshes, and thermionic superlattices, up to nanograined bulk-materials. In particular, the progress of nanostructured silicon and related alloys as an emerging material in thermoelectrics is emphasized. Scalable synthesis approaches of high-performance thermoelectrics for high-temperature applications is discussed at the end.
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Physical FunctionalityThe direct conversion of heat to electricity in thermoelectric devices is based on the Seebeck effect (named for Thomas J. Seebeck, 1821). In thermoelectric cooling devices use is made of the Peltier effect (named for Jean C. A. Peltier, 1834). [3][4][5] The thermoelectric effects were initially examined in metals. These generate only small thermovoltages of a few tens of microvolts per Kelvin. The electrical potential difference generated per degree of temperature difference is called Seebeck coeffi cient, S , or thermopower.By using semiconductors, substantially higher thermovoltages of some hundreds of μ V/K can be achieved. For thermoelectric applications, low bandgap semiconductors, with typical charge carrier concentrations in the order of 10 19 /cm 3 , are considered most suitable. Apart from a large Seebeck coeffi cient, a good thermoelectric material additionally needs to exhibit a high electrical conductivity and a low thermal conductivity to obtain a large fi gure of merit, ZT , at a certain temperature. The interdependence of these quantities has limited the ZT to values around one for the best conventional thermoelectric materials. For semiconductors and thermoelectric materials, the heat conductivity depends on both free charge carriers (holes or electrons) and phonons: κ tot = κ El + κ Ph . The phonon-based thermal conductivity κ Ph is decoupled from the electric conductivity. Thus, numerous attempts for the optimization of the thermoelectric effi ciency ZT in nanostructures are based on a reduction of the heat transport by phonons.