2011
DOI: 10.1557/jmr.2011.117
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Artificially nanostructured n-type SiGe bulk thermoelectrics through plasma enhanced growth of alloy nanoparticles from the gas phase

Abstract: Abstract

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Cited by 24 publications
(45 citation statements)
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“…The nanoparticles are crystalline (inset of Figure 12 b) and weakly agglomerated and typically show no crystal facets, due to kinetic control of the particle formation process. A subsequent current assisted sintering at temperatures around 1000 ° C results in an alloyed nanocrystalline bulk with average crystallite size around 30 nm and typical densities between 95% and 98% of the respective single crystal; Figure 12 at 1000 ° C. [ 101 ] Most likely, this type of materials synthesis will be also applied soon for other classed of nanograined thermoelectric materials.…”
Section: Bulkmaterialsmentioning
confidence: 99%
“…The nanoparticles are crystalline (inset of Figure 12 b) and weakly agglomerated and typically show no crystal facets, due to kinetic control of the particle formation process. A subsequent current assisted sintering at temperatures around 1000 ° C results in an alloyed nanocrystalline bulk with average crystallite size around 30 nm and typical densities between 95% and 98% of the respective single crystal; Figure 12 at 1000 ° C. [ 101 ] Most likely, this type of materials synthesis will be also applied soon for other classed of nanograined thermoelectric materials.…”
Section: Bulkmaterialsmentioning
confidence: 99%
“…The composition of the latter material is typical for thermoelectric applications. 25,26 Using HF, the laser-sintered films were released from the quartz substrate and transferred onto a Ge wafer, acting as a heat sink support. To suspend the laser-sintered film, a trench had been etched into the Ge wafer before film transfer.…”
mentioning
confidence: 99%
“…The images do not indicate the presence of an oxide shell on the particle surface, but due to handling in air, the highly reactive surface particles assumedly exhibit oxygen on the surface. Furthermore, a local enrichment of SiO2 due to segregation areas in the particles is not observed 46,47) . Therefore, the high defect density must be a result of lattice mismatches.…”
Section: Electron Microscopy Analysismentioning
confidence: 98%
“…The mean free path for phonons in highly doped silicon is a few tens of nanometers, while that for electrons is below 10 nm 58) . Thus, nanostructuring of silicon is an appropriate tool for designing thermoelectric generators with enhanced properties 33) , and alloying of the nanoparticles might give another degree of freedom 47,[59][60][61] . For this purpose, gas-phase synthesized silicon nanopowder doped with 1% of boron was spark-plasma-sintered for 180 s at a temperature of 1100 C into almost dense pellets.…”
Section: Thermoelectric Properties Of Silicon From Gasphase Synthesismentioning
confidence: 99%