2021
DOI: 10.3390/app11156703
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Architecture and Process Integration Overview of 3D NAND Flash Technologies

Abstract: In the past few decades, NAND flash memory has been one of the most successful nonvolatile storage technologies, and it is commonly used in electronic devices because of its high scalability and reliable switching properties. To overcome the scaling limit of planar NAND flash arrays, various three-dimensional (3D) architectures of NAND flash memory and their process integration methods have been investigated in both industry and academia and adopted in commercial mass production. In this paper, 3D NAND flash t… Show more

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Cited by 44 publications
(29 citation statements)
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“…The LCM set switching is performed by increasing less from 0.3 (forming) to 0.8 (set) mA, whereas the HCM is performed by increasing by even more, from 4 , 5 1 to 4.5 mAanother result of increasing the CC. The reset switching is difficult because of the high CC.…”
Section: Resultsmentioning
confidence: 99%
See 1 more Smart Citation
“…The LCM set switching is performed by increasing less from 0.3 (forming) to 0.8 (set) mA, whereas the HCM is performed by increasing by even more, from 4 , 5 1 to 4.5 mAanother result of increasing the CC. The reset switching is difficult because of the high CC.…”
Section: Resultsmentioning
confidence: 99%
“…The most common NVM in the market, silicon (Si)-based flash memory, is used primarily because of its high density [3]. Scaling down the size of NVM to have a higher density has evolved through the photolithography process but reached its physical limits [4]. The end of Moore's law is already just around the corner.…”
Section: Introductionmentioning
confidence: 99%
“…Among them, flash memory is extensively used as an information-storage device owing to its multibit per cell storage property, low power consumption, and stable retention capability. In traditional flash memory, the floating gate and conducting channel are usually based on polysilicon, whereas the blocking layer and tunnelling barrier are composed of silicon oxide [1,2]. Given the explosive growth of data generated every year, the dimensions of memory will…”
Section: Introductionmentioning
confidence: 99%
“…At the early stage of the 3D NAND development, various types of 3D NAND technologies were proposed. A comprehensive survey can be found in [32]. After extensive research on various technology options, vertical NAND string architecture with gate-all-around (GAA) cells was introduced to the industry for floating gate (FG) cells and charge-trap cells [2,33].…”
Section: Introductionmentioning
confidence: 99%