Application of plasmon-resonant microchip emitters to broadband terahertz spectroscopic measurement

This paper reviews recent advances in emission of terahertz radiation from two-dimensional (2D) electron systems in semiconductor nano-heterostructures. 2D plasmon resonance is first presented to demonstrate intense broadband terahertz emission from InGaP/InGaAs/GaAs material systems.The device structure is based on a high-electron mobility transistor and incorporates the author's original interdigitated dual-grating gates. Second topic focuses on graphene, a monolayer carbonatomic honeycomb lattice crystal, exhibiting unique carrier transport and optical properties owing to massless and gapless energy spectrum. Coherent stimulated terahertz emission from femtosecond infrared-laser pumped epitaxial graphene is experimentally observed, reflecting the occurrence of negative dynamic conductivity and population inversion.

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“…[42]. It is clearly seen that the main lobe of the emission spectra of the fabricated device stays around 1 to 6 THz.…”

Section: Device Structure and Performancementioning

confidence: 85%

Emission of terahertz radiation from two-dimensional electron systems in semiconductor nano-heterostructures

Otsuji

Karasawa

Watanabe

et al. 2010

Comptes Rendus. Physique

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“…[32][33][34]39 The original structure is a S-DGG in which interfinger spaces are all identical. The device was fabricated using InGaP/InGaAs/GaAs and/or InAl/InGaAs/InP material systems.…”

Section: Methodsmentioning

confidence: 99%

“…The device was fabricated using InGaP/InGaAs/GaAs and/or InAl/InGaAs/InP material systems. 33,34 So far a broadband THz emission ranging from 1 to ∼6 THz with a maximum output power of ∼1 μW at 300 K has been obtained reflecting multimode of coherent/incoherent plasmons, 41 for which oblique modes, 42 gated and ungated plasmon modes, 43 hot plasmons, 41 and chirped plasmon modes 33 are the major causes. The DGG-HEMT THz emitter can work for THz spectroscopic and imaging applications as an incoherent broadband THz microchip source, demonstrating fine identification of water vapor absorptions as well as finger prints of sugar groups.…”

Section: Methodsmentioning

confidence: 99%

“…3(a)]. [32][33][34] The DGGs can alternately modulate the 2-D electron densities to periodically distribute the plasmonic cavities (∼100 nm width in microns distance) along the channel by applying a large fraction of gate biases for subgratings G1 and G2. [32][33][34] Under pertinent drain-source dc bias conditions, dc electron drift flows may promote the plasmon instability, resulting in self-oscillation with characteristic frequencies in the THz regime.…”

Section: Theorymentioning

confidence: 99%

“…1 We have first proposed a 2-D plasmon-resonant microchip emitter featured with an interdigitated dual-grating gates (DGGs) structure. [32][33][34][35] The original structure uses symmetrical DGGs in which interfinger spaces are all identical, providing room-temperature 0.5-to 6.5-THz emission with 1-microwat-order radiation power 33,34 and rather low detection responsivity of the order of 10's V/W. 35 Recently, authors have proposed an asymmetric DGG (A-DGG) structure and demonstrated coherent monochromatic THz emission and ultrahigh-sensitive THz detection with 2.2 kV∕W at 1 THz radiation.…”

Section: Introductionmentioning

confidence: 99%

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Emission and detection of terahertz radiation using two-dimensional plasmons in semiconductor nanoheterostructures for nondestructive evaluations

et al. 2013

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Abstract. The recent advances in emission and detection of terahertz radiation using two-dimensional (2-D) plasmons in semiconductor nanoheterostructures for nondestructive evaluations are reviewed. The 2-D plasmon resonance is introduced as the operation principle for broadband emission and detection of terahertz radiation. The device structure is based on a high-electron-mobility transistor and incorporates the authors' original asymmetrically interdigitated dual-grating gates. IntroductionIn the research of modern terahertz (THz) electronics, development of compact, tunable, and coherent sources operating at THz frequencies is one of the hottest issues.1 Two-dimensional (2-D) plasmons in submicron transistors have attracted much attention due to their nature of promoting emission and detection of electromagnetic radiation in the THz range. The channel of a transistor can act as a resonator for plasma waves, the charge-density waves of collectively excited 2-D electrons. The plasma frequency depends on the resonator dimensions and the density of 2-D electrons. It can reach the sub-THz or even THz range for gate lengths of a micron and submicron (nanometer) size. Therefore, different devices/structures of micron and submicron sizes supporting low-dimensional plasmons were intensively studied as possible candidates for solid-state far-infrared (FIR)/THz sources 2-18 and detectors. [19][20][21][22][23][24][25][26][27][28][29][30] Mechanisms of plasma wave excitation/emission can be divided (by convention) into two types: (1) incoherent and (2) coherent. The first is related to thermal excitation of broadband nonresonant plasmons by hot electrons.2-7 The second is related to the plasma wave instability mechanisms like Dyakonov-Shur (DS) Doppler-shift model 8 and/or Ryzhii-Satou-Shur (RSS) transit-time model, 17,18 where coherent plasmons can be excited either by hot electrons or by optical phonon emission under near ballistic electron motion. 31 On the other hand, hydrodynamic nonlinearities of 2-D plasmons in highelectron-mobility transistors (HEMTs) are promising for fast and sensitive rectification/detection of THz radiation.

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Electrical Transport Properties of Layered Black Phosphorus grown by Chemical Vapor Transport

Zdeg

Al-Shami

Tiouichi

et al. 2022

Cryst. Res. Technol.

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This work investigates the transport properties of layered black phosphorus (BP) grown by the chemical vapor transport (CVT). The electrical measurements are carried out at a temperature ranging from 300 to 2 K and a magnetic field up to 16 Tesla. The CVT-grown BP exhibits p-type conduction with an acceptor's 14-1.2 meV activation energy. The concentration of ionized acceptors is 1.2 × 10 17 cm −3 Moreover, the Hall mobility is found to be 138 cm 2 V −1 s −1 and 4 × 10 4 cm 2 V −1 s −1 , respectively, at room temperature and 2 K. This work reveals the potential of CVT synthesis as a simple, nontoxic, and cheap technique to make high-quality BP crystals with high carrier mobility ready as a solid foundation for BP single-crystal application.

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Application of plasmon-resonant microchip emitters to broadband terahertz spectroscopic measurement

Cited by 21 publications

References 29 publications

Emission of terahertz radiation from two-dimensional electron systems in semiconductor nano-heterostructures

Emission of terahertz radiation from two-dimensional electron systems in semiconductor nano-heterostructures

Emission and detection of terahertz radiation using two-dimensional plasmons in semiconductor nanoheterostructures for nondestructive evaluations

Electrical Transport Properties of Layered Black Phosphorus grown by Chemical Vapor Transport

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