Applicability of self-consistent global model for characterization of inductively coupled Cl2 plasma

Efremov, Alexander; Kim, Gwan-Ha; Kim, Jong-Gyu; Bogomolov, A. V.; Kim, Chang-Il

doi:10.1016/j.vacuum.2006.09.017

Cited by 14 publications

(17 citation statements)

References 24 publications

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“…From Fig. 13,32 At the same time, an increase in gas pressure normally causes a decrease in ion flux ͑due to decreasing electron temperature and ion mean free path͒ and ion bombardment energy ͑through the decreasing floating potential͒. As for TeCl 4 ͑T mp = 224°C͒, 31 it can be related to the moderately ͑or low͒ volatile compounds.…”

Section: Resultsmentioning

confidence: 97%

Etching characteristics and mechanism of Ge2Sb2Te5 thin films in inductively coupled Cl2∕Ar plasma

Min

Efremov

Kim

et al. 2008

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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This work reports the investigations of both etch characteristics and mechanisms for the Ge2Sb2Te5 (GST) thin films in the Cl2∕Ar inductively coupled plasma. The GST etch rates and etch selectivities over SiO2 were measured as functions of the Cl2∕Ar mixing ratio (43%–86% Ar), gas pressure (4–10mTorr), and source power (400–700W). Langmuir probe diagnostics and zero-dimensional (global) plasma modeling provided the information on plasma parameters and behaviors of plasma active species. From the model-based analysis of surface kinetics, it was found that with variations of the Cl2∕Ar mixing ratio and gas pressure, the GST etch rate follows the changes of Cl atom density and flux but contradicts with those for positive ions. The GST etch mechanism in the Cl2-containing plasmas represents a combination of spontaneous and ion-assisted chemical reactions with no limitation by ion-surface interaction kinetics such as physical sputtering of the main material or the ion-stimulated desorption of low volatile reaction products.

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Section: Resultsmentioning

confidence: 97%

Etching characteristics and mechanism of Ge2Sb2Te5 thin films in inductively coupled Cl2∕Ar plasma

Min

Efremov

Kim

et al. 2008

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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“…-Gas temperature, Tgas, was assumed to be a) independent on Cl2/BCl3 mixing ratio; and b) the linear function of input power. Based on previous works [4][5][6], we suggested Tgas = 650-750 K for W = 500-800 W. Preliminary model runs indicated that the uncertainity in Tgas of  50 K has no principal impact on modeling results.…”

Section: Plasma Modelingmentioning

confidence: 89%

“…Input model parameters were experimental data on Te and J+. The kinetic scheme (the list of plasma chemical reactions with corresponding kinetic coefficients) was composed according to our previous works dealt with the modeling of BCl3 + Ar [9,10] and Cl2+Ar [4,5] plasmas. The computational procedure accounted for following assumptions:…”

Section: Plasma Modelingmentioning

confidence: 99%

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PLASMA PARAMETERS AND ACTIVE SPECIES KINETICS IN Cl2 + BCl3 + Ar GAS MIXTURE

2022

IZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENII KHIMIYA KHIMICHESKAYA TE

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Проведено исследование электрофизических параметров плазмы, стационарного состава газовой фазы и кинетики реактивно-ионного травления SiO2 в смеси Cl2 + BCl3 + Ar в условиях индукционного ВЧ 13,56 МГц разряда. Схема исследования включала диагностику плазмы зондами Лангмюра и 0-мерное (глобальное) моделирование кинетики плазмохимических процессов. В качестве неизменных параметров выступали: доля аргона в плазмообразующей смеси (20%), общее давление газа (6 мтор) и мощность смещения (300 Вт). Было найдено, что замещение Cl2 на BCl3 при постоянной вкладываемой мощности: а) оказывает влияние на параметры электронной и ионной компонент плазмы; б) приводит к снижению электроотрицательности плазмы; и в) сопровождается противоположными изменениями концентраций атомов хлора и радикалов BClx.Увеличение вкладываемой мощности при любом фиксированном составе смеси вызывает увеличение степени диссоциации исходных молекул и концентраций продуктов диссоциации. Показано, что зависимость скорости травления SiO2 от соотношения Cl2/BCl3 имеет немонотонный характер (максимум ~ 120 нм/мин в смеси состава 40% Cl2 + 40% BCl3 + 20% Ar), при этом увеличение доли BCl3 и вкладываемой мощности приводят к аналогичному изменению эффективной вероятности взаимодействия в системе SiO2 + Cl. Это не согласуется с изменением плотности потока энергии ионов. Предположено, что в качестве химически активных частиц плазмы выступают также радикалы ВСlx, вовлеченные в гетерогенные реакции вида SiOy + BClx → SiOy-1 + BClxO. Протекание таких реакций способствует увеличению числа центров адсорбции атомов хлора.

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“…21,22 For simplicity, we assumed the temperature of the neutral particles ͑T͒ to be independent of gas mixing ratio and to be equal to 700 K. 19,21 For negative ions, we applied G =0. 21,22 For simplicity, we assumed the temperature of the neutral particles ͑T͒ to be independent of gas mixing ratio and to be equal to 700 K. 19,21 For negative ions, we applied G =0.…”

Section: B Plasma Modelingmentioning

confidence: 99%

Effect of gas mixing ratio on etch behavior of ZrO2 thin films in Cl2-based inductively coupled plasmas

Efremov

Min

Yun

et al. 2008

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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Articles you may be interested inEffect of adding small amount of inductive fields to O2, Ar/O2 capacitively coupled plasmas J. Appl. Phys. 111, 093301 (2012); 10.1063/1.4705362 Etching characteristics and mechanisms of SiC thin films in inductively-coupled HBr-Ar, N2, O2 plasmas J. Vac. Sci. Technol. A 29, 06B103 (2011); 10.1116/1.3655561 Etch mechanism of In 2 O 3 and SnO 2 thin films in HBr-based inductively coupled plasmas J. Vac. Sci. Technol. A 28, 226 (2010); 10.1116/1.3294712 Effect of gas mixing ratio on etch behavior of Zr O 2 thin films in B Cl 3 ∕ He inductively coupled plasma J. Vac. Sci. Technol. A 26, 344 (2008); 10.1116/1.2891255 Plasma parameters analysis of various mixed gas inductively coupled plasmasThe analysis of the ZrO 2 thin film etch mechanism in the Cl 2 / Ar, Cl 2 / He, and Cl 2 / N 2 inductively coupled plasmas was carried out. It was found that an increase in additive gas fraction at fixed gas pressure and input power results in increasing ZrO 2 etch rate, which changes from 1.2 nm/ min for pure Cl 2 plasma up to 3.15, 2.40, and 2.31 nm/ min for 80% Ar, N 2 , and He, respectively. Langmuir probe diagnostics and zero-dimensional plasma modeling indicated that both plasma parameters and active species kinetics are noticeably influenced by the initial composition of the gas mixture. From the model-based analysis of etch kinetics, it was shown that, similarly to the case of BCl 3 -based plasmas, the behavior of the ZrO 2 etch rate corresponds to the ion-flux-limited etch regime.

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Applicability of self-consistent global model for characterization of inductively coupled Cl2 plasma

Cited by 14 publications

References 24 publications

Etching characteristics and mechanism of Ge2Sb2Te5 thin films in inductively coupled Cl2∕Ar plasma

Etching characteristics and mechanism of Ge2Sb2Te5 thin films in inductively coupled Cl2∕Ar plasma

PLASMA PARAMETERS AND ACTIVE SPECIES KINETICS IN Cl2 + BCl3 + Ar GAS MIXTURE

Effect of gas mixing ratio on etch behavior of ZrO2 thin films in Cl2-based inductively coupled plasmas

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