Antigen-Antibody Interaction-Based GaN HEMT Biosensor for C3G Detection

Kachhawa, Pharyanshu; Mishra, Saroj Kumar; Jain, Amber Kumar; Tripura, Chaturvedula; Joseph, Joshy; Radha, Vegesena; Chaturvedi, Nidhi

doi:10.1109/jsen.2022.3150027

Cited by 17 publications

(8 citation statements)

References 27 publications

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“…The response to the control samples is negligible compared to that to the HER2 antigen. The voltage sensitivity of the biosensor for HER2 detection has been calculated using the same methodology reported in our previous work, 37 and it is estimated to be a 124 mV per decade concentration of HER2. Additionally, the three-sigma method has been used to extract the biosensor's limit of detection (LOD).…”

Section: Resultsmentioning

confidence: 99%

“…31 In our previous studies, we developed HEMTs for various sensing and biosensing applications such as heavy metal, pH, polar liquid, C-erbB2/ HER2, and C3G detection. [32][33][34][35][36][37] The previously developed biosensor shows a reasonably good response for C-erbB2 (HER2) detection; however, it lacks robust surface biochemistry that limits the low-level detection of the targeted biomolecules. Also, it was demonstrated in human breast cancer cell lines that biopsy of the cell tissues from the affected area is required, making the testing invasive, challenging and less frequent.…”

Section: Introductionmentioning

confidence: 99%

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High sensitivity label-free detection of HER2 using an Al–GaN/GaN high electron mobility transistor-based biosensor

et al. 2022

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

High sensitivity label-free detection of HER2 using an Al–GaN/GaN high electron mobility transistor-based biosensor

et al. 2022

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“…It is currently the most promising device for electronic biosensors. Ambacher and colleagues demonstrated that AlGaN/GaN heterostructures are highly sensitive to ions, polar liquids, hydrogen gas, and even biological materials [10][11][12][13][14]. magnetic resonance imaging (MRI) in the medical field, adulterant detection, environmental monitoring, pathogenic food bacteria detection, agriculture, and other biosensing applications have recently used laboratory-based conventional methods.…”

Section: Introductionmentioning

confidence: 99%

Dual gate AlGaN/GaN MOS-HEMT biosensor for electrical detection of biomolecules-analytical model

Mann¹,

Sharma²,

Rewari³

et al. 2023

Semicond. Sci. Technol.

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This paper proposes an analytical model for a Dual gate AlGaN/GaN MOS-HEMT biosensor for electrical detection of neutral species such as Biotin, Keratin, ChOx, and Zein. When only one subband is occupied and the AlGaN layer is assumed to have been fully ionized, the Fermi-Dirac statistic and 2D state density are used to produce a self-consistent calculation of the carrier density in the quantum well at the interface.It is done by analyzing the impact of biomolecule concentration by inserting a biomolecule of appropriate dielectric permittivity in the cavity area beneath the gate region. The impact of cavity length has been analyzed on the sensor's performance. The proposed device significantly changes the channel potential, transconductance, drain current, and threshold voltage.Dual gate structures offer superior resistance to short channel effects. Due to enhanced transport characteristics, high carrier mobility, drain current, and a variety of other factors, double gate MOS HEMT outperforms single gate MOS HEMT.The maximaltransconductance,drain on sensitivity, and the maximaldrain currentthat has been attained in this work is 0.017S, 0.22 and 0.129mA, respectively, for biomolecule concentration, Nb=3×10¹².Among all the biomolecules used in this study, Keratin has achieved the maximum shift in threshold voltage and transconductance of 0.4V and 0.016S. The increase in current for Keratin, Biotin, Zein, and ChOx is 0.67%, 78%, 17%, and 42%, respectively, from single to Dual gate AlGaN/GaN MOS-HEMT. SiO2, Al2O3, and HfO2oxides have been compared by filling them in the left side of the cavity. Dual gate AlGaN/GaN MOS-HEMT biosensor presents an opportunity to develop robust, low-cost, specific detection and analysis of neutral biomolecule.The analytical model provides good results for drain current according to the comparison of simulation and analytical model findings.

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“…One of the most promising materials at the intersection of nano-electronics and nanomedicine is GaN, a wide-band-gap semiconductor compound widely used in lighting technologies and nano-opto-electronics. Properties like biocompatibility, 21 high thermal stability, chemical inertness, 22 and piezoelectricity 23 make it a very promising material for biomedical applications such as biosensor platforms for High Electron Mobility Transistors (HEMT) able to detect cancer markers, 24 biological molecules as cytochrome-c, biotin, 25 C3G proteins by antibody-antigen conjugation, 26 or other specific molecules. The specified biosensor platforms usually require the functionalization of the transistors gate by specific molecules which allows for selective detection of the target of interest.…”

Section: Introductionmentioning

confidence: 99%

Protein-corona formation on aluminum doped zinc oxide and gallium nitride nanoparticles

Ciobanu

Roncari

Ceccone

et al. 2022

Journal of Applied Biomaterials & Functional Materials

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The interaction of semiconductor nanoparticles with bio-molecules attracts increasing interest of researchers, considering the reactivity of nanoparticles and the possibility to control their properties remotely giving mechanical, thermal, or electrical stimulus to the surrounding bio-environment. This work reports on a systematic comparative study of the protein-corona formation on aluminum doped zinc oxide and gallium nitride nanoparticles. Bovine serum albumin was chosen as a protein model. Dynamic light scattering, transmission electron microscopy and X-ray photoelectron spectroscopy techniques have been used to demonstrate the formation of protein-corona as well as the stability of the colloidal suspension given by BSA, which also works as a surfactant. The protein adsorption on the NPs surface studied by Bradford Assay showed the dependence on the quantity of proteins adsorbed to the available sites on the NPs surface, thus the saturation was observed at ratio higher than 5:1 (NPs:Proteins) in case of ZnO, these correlating with DLS results. Moreover, the kinetics of the proteins showed a relatively fast adsorption on the NPs surface with a saturation curve after about 25 min. GaN NPs, however, showed a very small amount of proteins adsorbed on the surface, a change in the hydrodynamic size being not observable with DLS technique or differential centrifugal sedimentation. The Circular Dichroism analysis suggests a drastic structural change in the secondary structure of the BSA after attaching on the NPs surface. The ZnO nanoparticles adsorb a protein-corona, which does not protect them against dissolution, and in consequence, the material proved to be highly toxic for Human keratinocyte cell line (HaCaT) at concentration above 25 µg/mL. In contrast, the GaN nanoparticles which do not adsorb a protein-corona, show no toxicity signs for HaCaT cells at concentration as high as 50 µg/mL, exhibiting much lower concentration of ions leakage in the culture medium as compared to ZnO nanoparticles.

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Antigen-Antibody Interaction-Based GaN HEMT Biosensor for C3G Detection

Cited by 17 publications

References 27 publications

High sensitivity label-free detection of HER2 using an Al–GaN/GaN high electron mobility transistor-based biosensor

High sensitivity label-free detection of HER2 using an Al–GaN/GaN high electron mobility transistor-based biosensor

Dual gate AlGaN/GaN MOS-HEMT biosensor for electrical detection of biomolecules-analytical model

Protein-corona formation on aluminum doped zinc oxide and gallium nitride nanoparticles

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