2006
DOI: 10.1103/physrevb.73.085201
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Abstract: Defects with a hydrogen atom at an antibonding site are identified in germanium-rich SiGe alloys ͑Ge 1−x Si x ͒ implanted with protons at low temperatures. Infrared absorption spectra of proton-implanted Ge 1−x Si x reveal hydrogen-related absorption lines, which are similar to those observed previously in pure germanium, together with three unreported absorption lines. For crystals with a silicon content of 1.2 at. % these three lines are observed at 815.8, 1430.2, and 1630.7 cm −1 . The three lines are ascr…

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