2015
DOI: 10.1364/oe.23.022771
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Antenna resonances in low aspect ratio semiconductor nanowires

Abstract: We present numerical simulations of low aspect ratio gallium phosphide nanowires under plane wave illumination, which reveal the interplay between transverse and longitudinal antenna-like resonances. A comparison to the limiting case of the semiconducting sphere shows a gradual, continuous transition of resonant electric and magnetic spherical Mie modes into Fabry-Pérot cavity modes with mixed electric and magnetic characteristics. As the length of the nanowires further increases, these finite-wire modes conve… Show more

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Cited by 33 publications
(42 citation statements)
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“…We choose SiNWs with length long compared to the focal spot of the illuminating optics (all data acquired on NWs with L = 7 µm) in order to obtain a purely Mie-like response. 54 SEM images of selected rectangular SiNWs are shown in figure 2e. The images are obtained from a second sample, fabricated with the exact same process parameters but on a non-insulating silicon-on-insulator (SOI) substrate.…”
Section: Asymmetric Rectangular Silicon Nanowiresmentioning
confidence: 99%
“…We choose SiNWs with length long compared to the focal spot of the illuminating optics (all data acquired on NWs with L = 7 µm) in order to obtain a purely Mie-like response. 54 SEM images of selected rectangular SiNWs are shown in figure 2e. The images are obtained from a second sample, fabricated with the exact same process parameters but on a non-insulating silicon-on-insulator (SOI) substrate.…”
Section: Asymmetric Rectangular Silicon Nanowiresmentioning
confidence: 99%
“…The slight radial asymmetry of the near-field intensity is observed due to substrate effect. The magnetic field for the fundamental TE mode (TE 01 ) is highly confined within the NW core, indicating strong light trapping in a whispering-gallery mode configuration 20 . The high field intensities inside the structure can directly contribute to enhanced absorption.…”
Section: Resultsmentioning
confidence: 99%
“…3. Due to the combination effect of 1D longitudinal and radial transverse components, the resonance of TM modes shifts to higher energy with respect to TE modes, and thus degeneracies of TE and TM modes are broken 20 . The dramatic drop of the absorption efficiency at 550 nm is due to the low absorption coefficient below the bandgap of ZnTe.…”
Section: Resultsmentioning
confidence: 99%
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“…The rectangular section is varied by changing the SiNWs width. The length L = 7 µm is chosen large compared to the focal spot of the illuminating optics in order to obtain a purely Mie-like response [116]. All NWs have excellent surface properties, low roughness and steep flanks, verified by scanning electron microscopy.…”
Section: Rectangular Nanowiresmentioning
confidence: 99%