Tin complexes of phenoxide ligands having a range of dipole moments were prepared on the surface of indium-tin oxide (ITO). Surface complex loadings and stoichiometries were measured by quartz crystal microgravimetry. Work functions of ITO substrates treated with these various surface complexes were measured using a Kelvin probe. Surface complex dipole moments were then calculated based on measured surface loadings. Changes in the ITO work function effected by surface phenoxide complex introduction correlate with these surface complex dipole moments and with total surface dipole per unit area, and current densities in simple hole-only diode devices also correlate with these total surface dipoles.Surface modification of indium-tin oxide (ITO) has received wide attention as a means to control its anode properties, particularly to increase its work function (φ) in order to lower the barrier to hole injection in novel organic-based optoelectronic devices. [1][2][3][4][5][6][7] The Helmholtz expression derived from simple electrostatics, ∆φ ) qn∆µ ⊥ / r 0 , provides the conceptual basis for many practical attempts to enable this change in work function; here, q is the elementary charge, n is the surface dipole density, ∆µ ⊥ is the dipole moment perpendicular to the surface, r is the relative dielectric constant, and 0 is the vacuum permittivity. 8 An elegant model that has been proposed 9 within this context is based on an introduced dipole layer on the surface of the ITO: 10,11 If the negative end of the surface dipole species points away from the ITO surface, the work function of ITO is increased, and the hole injection barrier is decreased. 11,12 The effected work function change (∆φ) should be directly proportional to the normal component of molecular dipole moments of surface-attached species (µ z ) and to the number of such species, per unit area, on the surface, 9,12 in conformity to the Helmholtz expression. Many studies using organics to effect work function changes for ITO, for example, by surface deposition of organic acids [13][14][15] or surface silanization 16 with hole transport materials derivatives, have been described qualitatively. However, in the absence of structural or surface loading information for the surface dipolar species, no quantitative relationships between them and measured values for ∆φ or their impact on device behavior could be established.We have described surface modification of ITO in an ultrahigh vacuum (UHV) using a series of tin phenoxides, 17 and we showed that a correlation existed between dipole moments of the parent phenols and changes in the ITO work function that occurred on formation of the surface complexes. 18 Yet, even for these well-defined surface species, surface loadings were not known. We have reported that the surface deposition and ligand metathetical reactions for tin alkoxides on ITO recorded in UHV 17,18 can be accomplished under normal laboratory conditions. 17 We now demonstrate that performing these deposition and metathesis reactions on an ITO electro...