Annealing effects on structural, electrical and optical properties of antimony-tinoxide thin films deposited by sol gel dip coating technique

Comparative Study of Structural, Optical and Electrical Properties of SnO<sub>2</sub> Thin Film Growth via CBD, Drop-Cast and Dip-Coating Methods

“…From the literature it is observed that the SnO 2 crystals appeared at different annealing temperature, some are indicating above 550˚C [30], some are indicating at 500˚C [31] on the other hands some are indicating at 400˚C appeared some weak diffraction peaks and the peak intensity increases with temperature [32]. At this research, all the films are annealed at 500˚C for 2 hours due to observing all properties at the same condition.…”

“…The ʎ max does not shift much and absorbance increases with increasing the thickness of the films and scattering also increases with increasing the thickness of the films. The transmittance is high at visible region indicates that the films are relatively good homogeneous and formed at small nanometer-sized grains which is opposite of absorbance [31]. The transmittance is high at visible region because of the reflectivity low and very low absorption.…”

“…This happens due to the transition of electrons from valence band to conduction band with regard to optical interference effects [38] [39]. High transmittance at visible region is an important factors for the semiconducting material in a transparent device such as the SnO 2 thin films solar cell or transistor [31].…”