volume 142, issue 1, P28-30 2007
DOI: 10.1016/j.mseb.2007.06.015
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Abstract: The chemical mechanical polishing (CMP) of the Si face (0 0 0 1), the C face (0 0 01), the a face (1 12 0) and the m face (11 0 0) of silicon carbide (SiC) wafers was investigated. It was found that the removal rate and surface quality varied greatly with the different crystal face orientations during the CMP. Surface quality was characterized with atomic force microscopy (AFM) in terms of root mean square (RMS) roughness and high-resolution X-ray diffractometry (HRXRD). The optimum CMP process yielded a supe…

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