TRANSDUCERS '91: 1991 International Conference on Solid-State Sensors and Actuators. Digest of Technical Papers
DOI: 10.1109/sensor.1991.149007
|View full text |Cite
|
Sign up to set email alerts
|

Anisotropic etching of silicon in (CH/sub 3/)/sub 4/NOH solutions

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
1
1

Citation Types

0
9
0

Publication Types

Select...
4
2
1

Relationship

0
7

Authors

Journals

citations
Cited by 22 publications
(9 citation statements)
references
References 6 publications
0
9
0
Order By: Relevance
“…For typical TMAH solutions, etch-rate and surface roughness decrease as the TMAH concentration is increased. Tabata et al [29], [30] studied this and found that at 5 wt%, the surfaces are quite rough due to longer H bubble residence times, becoming quite smooth at approximately 20% (note that the formula given above is 10 wt%, trading off some surface roughness for lack of aluminum etching).…”
Section: B Anisotropic Wet Etchingmentioning
confidence: 99%
“…For typical TMAH solutions, etch-rate and surface roughness decrease as the TMAH concentration is increased. Tabata et al [29], [30] studied this and found that at 5 wt%, the surfaces are quite rough due to longer H bubble residence times, becoming quite smooth at approximately 20% (note that the formula given above is 10 wt%, trading off some surface roughness for lack of aluminum etching).…”
Section: B Anisotropic Wet Etchingmentioning
confidence: 99%
“…A number of different etchants produce this type of silicon profile, and tetramethyl ammonium hydroxide [TMAH, (CH 3 ) 4 NOH) [16,17] has been selected for this work, as it is compatible with CMOS technology [18]. It has the further advantages that it can be mixed with other chemicals to prevent it etching aluminium interconnect [19] and that it is less toxic than most other anisotropic etch solutions, such as alkaline metal hydroxides.…”
Section: Cavity Constructionmentioning
confidence: 99%
“…The etch solution used was 22% TMAH in water, heated to 908C, providing a ,100. etch rate of 40 mm min 21 . The relatively high concentration and temperature give an even etch, without hillocking [17], while still stopping on the membrane of silicon dioxide and nitride upon which the gold electrode is fabricated.…”
Section: Cavity Constructionmentioning
confidence: 99%
“…A water solution of tetramethylammonium hydroxide TMAH [38][39][40][41][42][43] is also used for silicon etching. The solution shows very high selectivity against LPCVD silicon nitrides and thermal silicon dioxide (few thousands:1) and remains harmless to health [41].…”
Section: Etching Solutions Chemical Reactions Etching Modelsmentioning
confidence: 99%
“…3.14. Etch rates of silicon as a function of concentration of KOH a) for different orientations (110), (100),(111) at 80°C[46], b) for different temperatures of solution for (100) plane[43].…”
mentioning
confidence: 99%