Angular-resolved uv photoemission and the band structure of GeS

Grandke, Thomas; Ley, L.

doi:10.1103/physrevb.16.832

Cited by 98 publications

(31 citation statements)

References 8 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…As discussed for GeS by Grandke and Ley [46], besides spinorbit, the interaction between the double layers also produces splitting of bands. According to our calculations, this latter effect is stronger than the one due to spin-orbit.…”

Section: Interaction Between the Double Layersmentioning

confidence: 96%

On the band gap location and core spectra of orthorhombic IV–VI compounds SnS and SnSe

Makinistian

Albanesi

2008

Physica Status Solidi (b)

View full text Add to dashboard Cite

While the orthorhombic IV–VI compounds show the typical layered behavior of that crystallography, we show that the presence of sulphur induces important changes to the band gap behaviour: both in its location, and in its character as well. Our modelling of tin sulfide (SnS) and tin selenide (SnSe), performed within an ab initio density‐functional theory (DFT) with a FP‐LAPW method, shows that the spin–orbit interaction produces slight splittings of bands in both compounds, especially in the conduction band, which are in very good agreement with measured values of the core spectra. In addition to these splittings, for SnS we found the novel feature that the spin–orbit relocates the band gap in the BZ, while it does not affect that of SnSe. Furthermore, several aspects of the crystals anisotropy may be explained upon our results on the hybridized band structure, the density of states (DOS) and the optical spectra (complex dielectric function and absorption coefficient). We satisfactorily compare our results with those available in the literature. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

show abstract

Section: Interaction Between the Double Layersmentioning

confidence: 96%

On the band gap location and core spectra of orthorhombic IV–VI compounds SnS and SnSe

Makinistian

Albanesi

2008

Physica Status Solidi (b)

View full text Add to dashboard Cite

show abstract

“…This layered material has been studied in detail by angle-resolved photoemission by Grandke and Ley [4]. Here, first, the band determination has been extended to cover the whole valence band range and for the intcrpretation of its two-dimensional character also photoexcitations by additional frequencies have been adopted (apart from HeI, also He11 and NeI sources have been used).…”

Section: Introductionmentioning

confidence: 99%

Band Structure and Lifetime Determinations for GeS from Angle‐Resolved Photoemission

Cháb

Bartoš

1984

Physica Status Solidi (b)

View full text Add to dashboard Cite

The experiniental determination of the electron dispersion relation, E(lcl;), for a qussi-two-dimensional system is performed by means of angle-resolved photoemission. Por the layered single crystal GcS, the whole valence band is mapped using Hel, HelI, and Xel excitation sourccs.Simple interpretation of peak widths in terms of hole lifet.imes, based on a three-step modal of photoemission, is given. 1)ic Elckt.ron~nclispcrsion E ( k ; l ) fiir das quasi-zweidimensionale System wird experimcntell mit Hilfe dcr winkelaufgclostcn Photoemission bestimmt. Fur dcn Schichtkristall GcS wird mit HeI-, HeII-und ~eI-Anregungsc~nelle~i das gesamtc Valenxband untersucht.. Kine einfache, anf dem dreistufigcn Model1 der Photoemission begriindetc I n t e r p r e t a h n dcr Peakbreitcn fiir die Lochlebensdaucr wird nngegebcn.

show abstract

“…With experimentally measured temperature coefficients of −0.437 meV/K 16 and −0.52 meV/K 21 for SnS and GeS, respectively, room temperature band gaps can be expected to differ from zero temperature gaps by ∼0.15 eV. Since band alignments depend on the band gap values on both sides of the interface, we performed carefully converged calculations of the band gap within the GW approximation to the self-energy in order to resolve the 17 for SnS and GeS, respectively. Relaxed structures are obtained from first-principles relaxation using the LDA functional.…”

Section: B Gw Calculationsmentioning

confidence: 99%

Quasiparticle band structures and interface physics of SnS and GeS

Malone

Kaxiras

2013

Phys. Rev. B

View full text Add to dashboard Cite

We perform first principles, density-functional-theory calculations of the electronic structure for the layered bulk materials SnS and GeS which are of interest for photovoltaic applications. Band gap corrections are computed within the GW approximation to the electron self-energy. The resulting quasiparticle gaps in both SnS and GeS are in excellent agreement with the majority of existing experimental measurements. In order to better understand the possible use of GeS layers as a carrier-confining barrier within a SnS-based photovoltaic device, we compute the band offsets for different orientations of a SnS/GeS heterojunction. We find the valence band offsets to be almost independent of interfacial direction while the conduction band offsets show a strong anisotropy as a result of the variation in the band gap caused by epitaxial strain along the different directions.

show abstract

Angular-resolved uv photoemission and the band structure of GeS

Cited by 98 publications

References 8 publications

On the band gap location and core spectra of orthorhombic IV–VI compounds SnS and SnSe

On the band gap location and core spectra of orthorhombic IV–VI compounds SnS and SnSe

Band Structure and Lifetime Determinations for GeS from Angle‐Resolved Photoemission

Quasiparticle band structures and interface physics of SnS and GeS

Contact Info

Product

Resources

About