Analytical compact modeling framework for the 2D electrostatics in lightly doped double-gate MOSFETs

Improved analytical potential modeling in double-gate tunnel-FETs

“…(6) φ channel (x, y) and the band bending distances from eqn. (8) and (9). In the source region for −d s < x < 0 follows (10) and in the drain region for l ch < x < l ch + d d…”

“…The main approach consists in a 2D closed-form Poisson equation solution φ P oisson within the channel area [8]. To consider parabolically shaped potential profiles at the source-and drain-to-channel junctions an additional 2D closed-form parabolic solution φ para from [9] was implemented for the channel region.…”

“…The quasi 2D potential extension for the source/drain region φ ext is based on an effective built-in potential model [10], [4]. A closed-form approach for the 2D electrical field was applied [8]. With these results, an expression for the quasi-2D B2B and TAT tunneling probability was developed by using the Wentzel-KramersBrillouin (WKB) approach followed by the calculation of the device B2B and TAT current [5].…”

“…The first one is a 2D closed-form solution of the Poisson equation φ P oisson with the conformal mapping technique [12]. It has been derived by applying the Schwarz-Christoffel transformation, and adapts the approach for Schottky-Barrier double-gate FETs published in our previous work [8]. The model assumes constant boundary conditions and abrupt doping profiles at the channel junctions (see Fig.…”

Analysis and Performance Study of III–V Schottky Barrier Double-Gate MOSFETs Using a 2-D Analytical Model

“…1, the assumed structure of the IV and III-V SB double-gate MOSFET device is shown with the definition of coordinates and boundary conditions. The structure in general has been reported in [28] and the adopted boundaries for the III-V channel material in [19] and [20]. The model presented in [19] and [20] was used to predict the n-type device behavior and was compared with TCAD Sentaurus FEM simulations [13].…”