Analytical ballistic theory of carbon nanotube transistors: Experimental validation, device physics, parameter extraction, and performance projection

Akinwande, Deji; Liang, Jiale; Chong, Soogine; Nishi, Yoshio; Wong, H.-S. Philip

doi:10.1063/1.3050345

Cited by 58 publications

(31 citation statements)

References 24 publications

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“…This letter represents a practical approach that fills a gap of computational tools between analytic ballistic models [8] and full-band Monte Carlo simulations of diffusive transport [7].…”

Section: Discussionmentioning

confidence: 99%

See 1 more Smart Citation

Multiband Mobility in Semiconducting Carbon Nanotubes

Yang

Liao

Pop

2009

IEEE Electron Device Lett.

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We present new data and a compact mobility model for semiconducting single-wall carbon nanotubes, with only two adjustable parameters, the elastic and inelastic collision mean free paths at 300 K. The mobility increases with diameter, decreases with temperature, and has a more complex dependence on charge density. The model and data suggest that the room temperature mobility does not exceed 10 000 cm 2 /V · s at high carrier density (n > 0.5 nm −1 ) for typical single-wall nanotube diameters, due to the strong scattering effect of the second subband.

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“…This letter represents a practical approach that fills a gap of computational tools between analytic ballistic models [8] and full-band Monte Carlo simulations of diffusive transport [7].…”

Section: Discussionmentioning

confidence: 99%

“…Previous theoretical efforts have developed sophisticated multiband Boltzmann transport [6] and Monte Carlo [7] simulations of CNTs. However, while compact models have been introduced for ballistic conduction in S-CNTs [8], no such work exists for diffusive mobility calculations.…”

Section: Introductionmentioning

confidence: 99%

Multiband Mobility in Semiconducting Carbon Nanotubes

Yang

Liao

Pop

2009

IEEE Electron Device Lett.

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“…The diameter determines the conductivity of the channel region and modulates the threshold voltage of a CN-MOSFET [9]. The diameter thereby influences both on-state and off-state currents.…”

Section: A Carbon Nanotube Diametermentioning

confidence: 99%

“…The diameter thereby influences both on-state and off-state currents. The threshold voltage of a single-tube P-type CN-MOSFET is [9] …”

Section: A Carbon Nanotube Diametermentioning

confidence: 99%

16nm P-type carbon nanotube MOSFET device profile optimization for high-speed

Sun

Kursun

2010

2010 International SoC Design Conference

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Carbon nanotube MOSFET (CN-MOSFET) is a promising future device candidate. The electrical characteristics of 16nm P-type CN-MOSFETs are explored in this paper. The optimum P-type CN-MOSFET device profiles with different number of tubes are identified with a low substrate bias voltage for high-speed operation. Technology development guidelines are provided for achieving high-speed, area efficient, and manufacturable integrated circuits with carbon nanotube transistors.Keywords -CN-MOSFET, high-speed switching, technology development, chirality vector, optimum diameter, charge screening effect.

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“…Consequently, the trans‐conductance value of the CNTFET in subthreshold region that is considered as a relation between the output current ( I D ) and input voltage ( V GS ) is obtained as follows:

{g_{m, sth} = \frac{\partial I_{italicsth}}{{\partial V}_{GS}}|}_{v_{ds} = 0} = \frac{1}{R_{q}} ((), \frac{e^{\frac{2 {qV}_{GS} - E_{g}}{2 italickT}}}{1 + e^{\frac{2 {italicqV}_{italicGS} - E_{g}}{2 kT}}} - \frac{e^{\frac{2 {qV}_{GS} - 2 normalα {qV}_{normalD S} - E_{g}}{2 italickT}}}{1 + e^{\frac{2 {italicqV}_{italicGS} - 2 α {italicqV}_{italicDS} - E_{g}}{2 kT}}})

…”

Section: Cntfet Technologymentioning

confidence: 99%

A CNTFET universal mixed‐mode biquad active filter in subthreshold region

Zanjani

Dousti

Dolatshahi

2018

Int J RF Microw Comput Aided Eng

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This paper presents a new low‐voltage and low‐power mixed‐mode universal active filter, using only 12 carbon nanotube field effect transistors (CNTFETs) and 2 grounded capacitors to improve the noise performance of the proposed circuit. Due to the use of subthreshold transistors biased at ±0.2 V supply voltage, the power consumption of the proposed multi input‐single output (MISO) filter is only 850 nW at 19 MHz center frequency. On the other hand, relaxing from any matching components, the center frequency and quality factor of the proposed filter can be tuned electronically with low sensitivity to the values of the active and passive elements. Furthermore, the active chip area of the proposed filter is significantly reduced to 0.047 μm2, in 32 nm CNTFET technology. Therefore, as the HSPICE simulation results show, the input referred noise values at 19 MHz are reduced to 15.5 nV/Hz and 185 fA/Hz in voltage and current modes, respectively. It is also shown that, by changing the number of nanotubes in the CNTFET structure, a very good power‐frequency trade‐off can be achieved for low‐power GHz applications.

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Analytical ballistic theory of carbon nanotube transistors: Experimental validation, device physics, parameter extraction, and performance projection

Cited by 58 publications

References 24 publications

Multiband Mobility in Semiconducting Carbon Nanotubes

Multiband Mobility in Semiconducting Carbon Nanotubes

16nm P-type carbon nanotube MOSFET device profile optimization for high-speed

A CNTFET universal mixed‐mode biquad active filter in subthreshold region

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