Analysis of the conduction mechanisms responsible for multilevel bipolar resistive switching of SiO2/Si multilayer structures

González-Flores, K.E.; Horley, Paul; Cabañas-Tay, S.A.; Pérez‐García, Sergio Alfonso; Licea‐Jiménez, Liliana; Palacios-Huerta, L.; Aceves-Mijares, M.; Moreno, Mario; Morales–Sánchez, A.

doi:10.1016/j.spmi.2019.106347

Cited by 18 publications

(10 citation statements)

References 42 publications

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“…Based on the conductive filament’s nature, if this is strong enough, it will require a higher energy to be destroyed, which is reached with a higher voltage and, in some cases, without the observation of the IRS (abrupt, at 7.2 V). In fact, in a previous work, we reported a multilevel bipolar RS behavior in structures with eight Si-NCs/SiO 2 bilayers [ 32 ]. In these structures, the resistance level of the device is gradually switched through several IRSs, controlled by the stop voltage during the continuous DC sweep in the electroforming, SET and RESET processes.…”

Section: Resultsmentioning

confidence: 99%

“…Pure SiO x -based nano-memristors, produced by a novel nanoembedding-and-oxidation-of-nanoparticles procedure, have shown a regeneration of RS properties after 1000 cycles by the application of a positive voltage higher than +15 V for 500 ms, which establishes again the condition for Si oxidation [ 29 , 30 ]. At the same time, the electrical characterization of SRO films clearly shows not only an intrinsic RS behavior but also the presence of multiple conductance states [ 31 , 32 ]. In our previous works, we demonstrated the control of unipolar and bipolar abrupt (i.e., digital) RS for Si-NCs embedded in Si/SiO 2 multilayer (ML) structures [ 32 , 33 ].…”

Section: Introductionmentioning

confidence: 99%

“…At the same time, the electrical characterization of SRO films clearly shows not only an intrinsic RS behavior but also the presence of multiple conductance states [ 31 , 32 ]. In our previous works, we demonstrated the control of unipolar and bipolar abrupt (i.e., digital) RS for Si-NCs embedded in Si/SiO 2 multilayer (ML) structures [ 32 , 33 ]. These devices exhibit multilevel RS behavior, that is, different resistance states during the partial formation and annihilation of the conductive filaments.…”

Section: Introductionmentioning

confidence: 99%

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Digital and Analog Resistive Switching Behavior in Si-NCs Embedded in a Si/SiO2 Multilayer Structure for Neuromorphic Systems

et al. 2023

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In this work, we report the digital and analog resistive-switching (RS) characteristics in a memristor based on silicon nanocrystals (Si-NCs) integrated into a complementary metal-oxide-semiconductor (MOS) structure. Si-NCs with a diameter of 5.48 ± 1.24 nm embedded in a SiO2/Si-NCs/SiO2 multilayer structure acts as an RS layer. These devices exhibit bipolar RS with an intermediate resistance step during SET and RESET processes, which is believed to lie in the Si-NCs layer acting as charge-trapping nodes. The endurance studies of about 70 DC cycles indicate an ON/OFF ratio of ~106 and a retention time larger than 104 s. Long-term potentiation (LTP, −2 V) and long-term depression (LTD, +4 V) are obtained by applying consecutive identical pulse voltages of 150 ms duration. The current value gradually increases/decreases (LTP/LTD) as the pulse number increases. Three consecutive identical pulses of −2 V/150 ms (LTP) separated by 5 and 15 min show that the last current value obtained at the end of each pulse train is kept, confirming an analog RS behavior. These characteristics provide a possible way to mimic biological synapse functions for applications in neuromorphic computing in Si-NCs-based CMOS structures.

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Digital and Analog Resistive Switching Behavior in Si-NCs Embedded in a Si/SiO2 Multilayer Structure for Neuromorphic Systems

et al. 2023

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“…Upon applying a positive bias to the Ag electrode, the silver (Ag) ions undergo oxidation, which results in the formation of Ag ions (Ag + cations). The resulting Ag + cations move downward to the bottom ITO electrode, which results in the formation of Ag conductive filaments, as shown in figure 8(b) [29]. Similarly, the oxygen vacancy (VO s ) migrates towards the top electrode and forms an anionic conductive filament at the NiO interface [28].…”

Section: Proposed Resistive Switching Mechanismmentioning

confidence: 98%

“…From the above analysis, it was observed that the ITO/NiO(375)Ag based devices were described by the space charge limited conduction (SCLC) mechanism [22], and the relationship between the SCLC conduction mechanism and the current density (J) at the high voltage of the HRS region is given by the following relation, [29]…”

Section: Current-voltage Characteristicsmentioning

confidence: 99%

Impact of substrate temperature on NiO thin films for resistive switching memory (ReRAM) memory devices

Kossar

2024

Eng. Res. Express

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In this research, we report the bipolar resistive switching (RS) behavior of NiO thin films at various substrate temperature between 300ºC to 400ºC. A non-vacuum spray pyrolysis method is adopted to deposit NiO thin film layers. The structural studies confirm that all the NiO thin films were polycrystalline in nature along with cubic structure. The micrograph analysis of the NiO thin film layers shows a homogeneous distribution of grain without voids and micro-cracks. The optical transmittance spectra reveals that NiO (375) sample exhibit maximum transparent (> 60 %) in the visible region. The NiO switching layers were sandwiched between bottom indium-doped tin oxide (ITO), and top silver (Ag) electrodes, and their RS behavior were examined. The fabricated ITO/NiO/Ag RS devices shows bipolar current (I)-voltage (V) behavior with calculated ON/OFF ratio of 1.5. Moreover, the observed RS bahaviour in the fabricated ITO/NiO/Ag devices was associated due to the formations and ruptures of conductive paths.Keywords: Nickel oxide (NiO); formation and rupture; resistive switching (RS) 

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Oxynitride Amorphous Carbon Layer for Electrically and Thermally Robust Bipolar Resistive Switching

Min

Hyeon

Jang

et al. 2023

Adv Elect Materials

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Advanced resistive random‐access memory (ReRAM) devices based on resistive switching (RS) have been intensely studied for future high‐density nonvolatile memory devices owing to their high scalability, simplified integration, fast operation, and ultralow power consumption. Among the recently considered active media, diverse carbon‐based media have emerged because of numerous benefits of simple chemical composition, desirable speed, and cost‐effective scalability. However, these media are still susceptible to undesirable reliability issues, including poor endurance and retention and uncontrollable operation voltage distribution. In this study, an oxynitride amorphous carbon active medium governed by appropriate nitrogen content during growth is introduced to facilitate high electrical stability, such as a distinct pulse endurance of more than 107 cycles, a high retention time of 105 s at 85 °C, and increased uniformity in the SET/RESET distribution with thermally robust RS stability even at a high annealing temperature of 400 °C. The findings are possibly the result of adapting an sp2–sp3 conversion nature assisted by the presence of pyridinic N or pyrrolic N as a substitution reaction.

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Analysis of the conduction mechanisms responsible for multilevel bipolar resistive switching of SiO2/Si multilayer structures

Cited by 18 publications

References 42 publications

Digital and Analog Resistive Switching Behavior in Si-NCs Embedded in a Si/SiO2 Multilayer Structure for Neuromorphic Systems

Digital and Analog Resistive Switching Behavior in Si-NCs Embedded in a Si/SiO2 Multilayer Structure for Neuromorphic Systems

Impact of substrate temperature on NiO thin films for resistive switching memory (ReRAM) memory devices

Oxynitride Amorphous Carbon Layer for Electrically and Thermally Robust Bipolar Resistive Switching

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