Analysis of strength and response of polymer nano thin film interfaces applying nanoindentation and nanoscratch techniques

Mallikarjunachari, G.; Ghosh, Pijush

doi:10.1016/j.polymer.2016.02.042

Cited by 40 publications

(29 citation statements)

References 30 publications

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“…The hardness and reduced modulus values are given by the Oliver–Pharr equations below and are directly obtained from the instrument.

H = \frac{P_{\max}}{A_{c}}

A_{c} = f (h_{c}) = C_{1} h_{c}^{2} + C_{2} h_{c} + C_{3} h_{c}^{1 / 2} + C_{4} h_{c}^{1 / 4} + \dots

E_{r} = \frac{\sqrt{π}}{2 β} \frac{s}{\sqrt{A_{c}}}

where, P max is the maximum load; C 1 , C 2 , C 3 , C 4 are constants and E r is the reduced Young's modulus; A c is the contact area; h c is the contact height; and s is stiffness of the material as expressed in above equations …”

Section: Resultsmentioning

confidence: 99%

Evolution of morphology, ferroelectric, and mechanical properties in poly(vinylidene fluoride)–poly(vinylidene fluoride‐trifluoroethylene) blends

Ganesan

Mallikarjunachari

Jatav

et al. 2017

J of Applied Polymer Sci

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Considering the complementary properties of poly(vinylidene fluoride) (PVDF) and poly(vinylidene fluoride‐trifluoroethylene) [P(VDF‐TrFE)], it appears that their blends have the potential to be promising candidates for device applications. We report the evolution of morphology, ferroelectric, and mechanical properties (modulus and hardness) and their dependence on preparation temperature for PVDF–P(VDF‐TrFE) blends. From ferroelectric hysteresis measurements it was found that P(VDF‐TrFE) rich blends treated at higher temperature show significant values of remanent polarization. Remanent polarization values show a fourfold increase in these P(VDF‐TrFE) rich blends treated at higher temperature. Interestingly, blends prepared from high temperature showed greater value of remanent polarization even though they were found to consist of smaller amount of electroactive phase as compared to their low temperature treated counterpart. Nanoindentation experiments revealed that high temperature treatment improves the modulus of blends by at least 100%. This report attempts to tie these findings to the morphology and crystallinity of these blends. © 2017 Wiley Periodicals, Inc. J. Appl. Polym. Sci. 2018, 135, 45955.

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“…The hardness and reduced modulus values are given by the Oliver–Pharr equations below and are directly obtained from the instrument.

H = \frac{P_{\max}}{A_{c}}

A_{c} = f (h_{c}) = C_{1} h_{c}^{2} + C_{2} h_{c} + C_{3} h_{c}^{1 / 2} + C_{4} h_{c}^{1 / 4} + \dots

E_{r} = \frac{\sqrt{π}}{2 β} \frac{s}{\sqrt{A_{c}}}

Section: Resultsmentioning

confidence: 99%

Evolution of morphology, ferroelectric, and mechanical properties in poly(vinylidene fluoride)–poly(vinylidene fluoride‐trifluoroethylene) blends

Ganesan

Mallikarjunachari

Jatav

et al. 2017

J of Applied Polymer Sci

Self Cite

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“…The broad peak at ≈3289 cm −1 for the piranha-treated glass indicates a noncomplexed (free) O-H band vibration, which was absent from the spectrum of the unmodified glass (Figure 2d), suggesting [45] A schematic explanation of the noncomplexed and associated O-H bands [46] is given in Figure S2 (Supporting Information). [44,45] Figure 2f depicts the hydrogen bonding interfacial interaction between the two groups, resulting in a good adhesion. [44,45] Figure 2f depicts the hydrogen bonding interfacial interaction between the two groups, resulting in a good adhesion.…”

Section: Free-standing Ultrathin Pmma Substrate Preparationmentioning

confidence: 99%

“…Bottom-gated indium-galliumzinc oxide (IGZO) TFTs and palladium-decorated (Pd-dec) IGZO H 2 sensors were fabricated on top of the 0.7 µm negative resist/1.2 µm PMMA layers (hereafter, called as PMMA substrate, see Figure S1, Supporting Information). [44] The smaller contact angle of the piranha-treated glass slide indicates that it had a higher surface energy than the unmodified glass slide and thus was in a less thermodynamically stable state, which favored the surface covering with other materials. Figure 1 presents the fabrication scheme for electronic devices, such as IGZO-based TFTs and IGZO-based H 2 sensors, on a thin PMMA layer/glass slide and the subsequent separation of the electronic devices from the glass slide.…”

Section: Introductionmentioning

confidence: 99%

Extremely Flexible Indium‐Gallium‐Zinc Oxide (IGZO) Based Electronic Devices Placed on an Ultrathin Poly(Methyl Methacrylate) (PMMA) Substrate

Kumaresan

Lee

Lim

et al. 2018

Adv Elect Materials

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deformation is highly recommended for wearable electronics placed on any textile products and/or hand gloves. [20,21] In general, the substrate having the electronic devices plays an important role in their flexibility. To date, polyimide (PI) has been widely utilized as a flexible substrate due to its excellent dielectric property, and good chemical and thermal stability. [22][23][24][25][26][27] However, commercially available PI is not transparent, which limits its use in display applications, and conformal contact of PI substrate onto nonplanar surfaces such as gloves, flexible poly(vinyl chloride) (PVC) tubes, or cotton by using a glue is impractical.To attain both high flexibility and conformal contact of electronic devices, researchers have designed free-standing organic devices, in which a polymer dielectric layer (e.g., polystyrene, polyacrylonitrile, polylactide) or organic active layer (e.g., pentacene) itself acts as a substrate. [28][29][30][31] Zhang et al. fabricated freestanding pentacene field effect transistors (FETs) by utilizing a polyacrylonitrile dielectric layer to hold the device components and attached it onto rough or even sharp substrates. [32] However, as semiconducting polymers are not stable under atmospheric conditions, [33,34] metal oxide-based electronic devices [35][36][37] using thin inorganic semiconductor layers, such as SnO 2 , ZnO, In-Ga-ZnO, MoO 3 , and TiO 2 , are utilized; however, the thin metal oxide layers cannot endure physical strain greater than 1%, while being bent and twisted. [38] In fact, the physical strain (S) acting on the thin metal oxide layer while being bent can be controlled by substrate thickness, which is determined by a simple formula S = d/2r ("d" is the substrate thickness, and "r" is the bending radius).Therefore, metal oxide-based electronic devices placed on top of an ultrathin organic substrate have been pursued to have less physical strain for ultraflexibility. [39][40][41][42][43] Han et al. engineered a foldable indium tin oxide (ITO)-coated glass platform composed of thick and nondeformable parts surrounded by thin and foldable glass, which was selectively etched down to 5 µm, and successfully obtained a foldable substrate without any device failure. [39] Hassan et al. utilized a thin Al 2 O 3 substrate to fabricate flexible metal oxide-based H 2 sensors. [40] Kim et al. fabricated In-Ga-ZnO TFTs on a 1.5 µm thick polyimide substrate and demonstrated its bendability at a bending radius down to 0.25 mm. [41] The flexibility of metal oxide-based electronic devices is severely limited by the thickness of their substrate. To enhance the flexibility of semiconducting metal oxide-based electronic devices, a new and simple way to fabricate indium-gallium-zinc oxide (IGZO)-based electronic devices on an ultrathin (1.9 µm) poly(methyl methacrylate) (PMMA) substrate is introduced. The PMMA layer spin-coated on an unmodified glass slide has no chemical interactions at the interface, resulting in weak adhesion. Therefore, the PMMA layer with the devices...

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“…The hardness measurements obtained in these studies show significantly larger variance compared to the variance in the modulus measurements, some of which may be attributed to the data analyses protocols employed in these studies (these will be discussed in more detail later). The technique has been applied successfully in multiple studies, [45][46][47][48][49][50] often in combination with the nanoscratch tests. 26,[44][45][46][47]50 The advantage of the nanoscratch tests is that they allow for a more precise identification of the extent of penetration of the interphase region into the matrix.…”

Section: Interfaces and Interphases In Compositesmentioning

confidence: 99%

“…The technique has been applied successfully in multiple studies, [45][46][47][48][49][50] often in combination with the nanoscratch tests. 26,[44][45][46][47]50 The advantage of the nanoscratch tests is that they allow for a more precise identification of the extent of penetration of the interphase region into the matrix. It is generally expected that a smooth gradient in the mechanical properties reduces the stress and/or strain concentrations that occur at the interface, and therefore should have a beneficial impact on the overall strength of the composite.…”

Section: Interfaces and Interphases In Compositesmentioning

confidence: 99%

Mechanical Characterization of Mesoscale Interfaces Using Indentation Techniques

Kalidindi

Mohan

Rossi

2016

JOM

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Mesoscale interfaces and interphases play a central role in controlling the many macroscale mechanical properties and performance characteristics of structural materials. Modern instrumented indenters present an unprecedented opportunity to measure, reliably and consistently, the local mechanical responses at a multitude of length scales ranging from tens of nanometers to hundreds of microns. When these high-fidelity measurements are combined with rigorous data analyses protocols, it is possible to systematically study the mechanical role of individual mesoscale interfaces and quantify their contributions to the overall mechanical response of the material system. The advantages of these new measurement and analyses protocols as well as the potential for development and implementation of novel high-throughput assays is discussed.

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Analysis of strength and response of polymer nano thin film interfaces applying nanoindentation and nanoscratch techniques

Cited by 40 publications

References 30 publications

Evolution of morphology, ferroelectric, and mechanical properties in poly(vinylidene fluoride)–poly(vinylidene fluoride‐trifluoroethylene) blends

Evolution of morphology, ferroelectric, and mechanical properties in poly(vinylidene fluoride)–poly(vinylidene fluoride‐trifluoroethylene) blends

Extremely Flexible Indium‐Gallium‐Zinc Oxide (IGZO) Based Electronic Devices Placed on an Ultrathin Poly(Methyl Methacrylate) (PMMA) Substrate

Mechanical Characterization of Mesoscale Interfaces Using Indentation Techniques

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