Analysis of hot-carrier degradation in a SOI LDMOS transistor with a steep retrograde drift doping profile

Performance drifts of N-MOSFETs under pulsed RF life test

“…The origin of the observed shift related to the presence of very high electric field which increase carrier injection into the grown silicon dioxide layer (SiO 2 ) and into interface state Si/SiO 2 [19,20]. The detail at the lateral electric field distribution for power RF N-LDMOS transistor of the active silicon layer in channel and drift regions is shown in Fig.…”

Accurate LDMOS Model Extraction Using DC, CV and Small Signal S Parameters Measurements for Reliability Issues

“…In addition, the cross-section of the RF LDMOS (see Fig. 2a) device used in this study was implemented and simulated with ATLAS-SILVACO in order to explain qualitatively electrical parameter shifts (Cortés et al, 2005, Brisbin et al, 2005, Silvaco, 1998. The structure is a modified 2D RF power N-channel LDMOS structure, previously developed by (Raman et al, 2003), with a Gaussian doping profile along LDD and channel surface, see also …”

Electrical parameters degradation of power RF LDMOS device after accelerated ageing tests

“…The origin of the observed shift could be related to the presence of very high electric field which increases carrier injection into the grown silicon dioxide layer (SiO 2 ) and into interface state Si/SiO 2 [14,15]. The detail of the lateral electric field distribution of the active silicon layer in channel and drift regions is shown in Fig.…”

“…Since the LDMOS is used in these conditions, where drain is biased with high voltage simultaneously with thermal excitation due to thermal cycling and shock (making easy the current flow), these two factors translated the correlation of thermal and electrical stresses [17]. The hot carrier degradation effect is closely related with current density and with the total number of free electrons at the silicon-oxide interface, where most of the electrons are concentrated deep inside the drift region [14,15,18]. Simulated current flow lines of device are displayed in Fig.…”

“…In other words, the drain-source voltage increases the electric field below the gate towards the trench LDD region and near the oxide layer, therefore enhancing the trapping process. So the degradation rate is accelerated [15,19,20]. This means that the tracking of these parameters enables to consider the hot carrier injection as dominant degradation phenomenon in spite of the power efficiency improvement.…”