R. Annunziata, R. Bottini, P. Colpani, C. Cremonesi, G. Ghidini, E. Gomiero, G. Pavia, F. Pio, M. L. Polignano, G. Servalli, V. Higgs
Abstract:AbstractIn this paper we show that dopant decoration of process-induced defects is responsible for a failure mechanism of memory devices. From the electrical point-of-view, the defect-related failure consists in a source-to-drain resistive path formed by junction piping. This mechanism is made active by the very close spacing which is typical of present device structures. A device-like test structure is used for defect detection. This structure proves to be a very effective tool for studying the impact of vari…
scite is a Brooklyn-based startup that helps researchers better discover and evaluate scientific articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by researchers from dozens of countries and is funded in part by the National Science Foundation and the National Institute of Drug Abuse of the National Institutes of Health.