Analog Parameters of Strained Non-Rectangular Triple Gate FinFETs

Abstract

The strained silicon technology together to the reduction of the temperature is studied in this paper on trapezoidal triple gate FinFETs, through three-dimensional numerical simulation, with particular focus on analog parameters. The comparison of the intrinsic voltage gain between the different trapezoidal fin shapes demonstrated that, although the strained silicon technology provided higher intrinsic voltage gain, the fin shape can have a major role in analog parameters, helping to improve those parameters under certain circumstances. Higher intrinsic voltage gains were obtained for strained devices with top fin width larger than bottom.

Strain Effectiveness Dependence on Fin Dimensions and Shape for n-type Triple-Gate MuGFETs

“…The fin etching process generates well formed sidewalls but still has some imperfections, although the improvements over the years, leading to cross-section shapes other than the intended rectangular shape (4)(5)(6)(7)(8). Some studies have been carried out by the authors and other groups on such non-rectangular shapes, addressing mainly the electrostatic issues, such as the threshold voltage shift and the coupling implications of variable fin widths (9)(10)(11)(12)(13). Some particular shapes, like the trapezium, have shown better performance under the right conditions, and someone would consider building it intentionally aiming a performance gain.…”