2020
DOI: 10.1109/tcsi.2020.2991184
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An X-Band Class-J Power Amplifier With Active Load Modulation to Boost Drain Efficiency

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Cited by 16 publications
(7 citation statements)
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“…Finally, the improved performance parameters of the proposed Class-J PA with L-type input and π-type output matching networks are compared with similar Class-J PAs in the literature. [30][31][32][33][34] As these PAs were designed at different frequencies and technologies, it is difficult to compare their performances. However, it can be noted that the Class-J PA design is proposed with a compact transmission line-based output matching network (OMN) in 30 that uses the same transistor technology (GaN) of this work to obtain broadband and highly efficient amplification and achieves a maximum drain efficiency of 75%.…”
Section: Discussionmentioning
confidence: 99%
See 1 more Smart Citation
“…Finally, the improved performance parameters of the proposed Class-J PA with L-type input and π-type output matching networks are compared with similar Class-J PAs in the literature. [30][31][32][33][34] As these PAs were designed at different frequencies and technologies, it is difficult to compare their performances. However, it can be noted that the Class-J PA design is proposed with a compact transmission line-based output matching network (OMN) in 30 that uses the same transistor technology (GaN) of this work to obtain broadband and highly efficient amplification and achieves a maximum drain efficiency of 75%.…”
Section: Discussionmentioning
confidence: 99%
“…However, the gain of this PA is high compared to our work, as it is designed as a multistage PA. A Class-J PA designed for X-Band is presented in. 33 It uses the active load modulation technique, facilitates the PA's integrated implementation by eliminating the doubler and filter networks of conventional Class-J2 PAs, and achieves a drain efficiency of 71% and a PAE of 50%. However, the broad B.W.…”
Section: Discussionmentioning
confidence: 99%
“…Ref [19] 2017 [32] 2018 [33] 2020 [34] Although it is di cult to compare the performance of the PA of this work with the recent similar PAs due to their different design frequencies and technologies, it is worth noting that a 2-stack structure-based CMOS class-J PA with 3.5GHz centre frequency presented in [19] delivers a max Pout of 22dBm.Compared to this, the PA of our work based on GaN transistor delivers a max Pout of 41dBm without any stacked structure due to its high-power handling capability. A 5GHz integrated class-J PA designed for WLAN 802.11ax applications using GaN technology presented in [32] delivers almost same performance metrics like 55% maximum PAE and 38dbM power output.…”
Section: Table 3 Performance Comparisonmentioning
confidence: 99%
“…The performance of this PA can be enhanced further by employing DPD. A Class-J PA designed for X-Band is presented in [18], uses the Active Load Modulation technique, and facilitates the PA's integrated implementation by eliminating the doubler and filter networks of conventional class-J2 Pas, and achieves High drain-efficiency. But the broad BW is not achieved due to harmonic tuners.…”
Section: Brief Review Of Switching Mode Pas and Theory Of Class-j Power Amplifiermentioning
confidence: 99%