An Ultra Low-Voltage Ultra Low-Power CMOS Threshold Voltage Reference

Ferreira, Luís H. C.; Pimenta, Tales Cleber; Moreno, Robson Luiz

doi:10.1093/ietele/e90-c.10.2044

Cited by 13 publications

(9 citation statements)

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“…However, it has limitations in compensating the nonlinear component of the voltage [33]. The temperature performance of bandgap voltage regulators can be improved further by either resistor trimming or second-order curvature correction techniques [14], [18].…”

Section: B Regulator Output Voltagementioning

confidence: 99%

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A Low Quiescent Biased Regulator With High PSR Dedicated to Micropower Sensor Circuits

Ong

Chan

2010

IEEE Sensors J.

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A new micropower high power-supply-rejection (PSR) regulator, on the basis of op-amp-less architectural design, is presented in this paper. The proposed regulator is based on the embodiment of the Brokaw bandgap regulator circuit in an additional feedback control loop so as to achieve high efficiency in terms of referenced PSR bandwidth per current. The measured PSR performance without any filtering capacitor for a 50-k nominal resistive load at 1 kHz and 1 MHz are obtained as 76 and 43 dB, respectively. The regulator, making use of native driving devices to improve the headroom, supports the supply range from 2 to 3.3 V. The output voltage is close to 1.8 V, having an untrimmed temperature coefficient of 117 ppm C from 40 C to 125 C while drawing the quiescent current of only 5.65 A. The regulator occupies an area of 0.047 mm 2 using current source model 1.8 V/3.3 V CMOS 0.18 m triple-well process technology. The circuit is verified using the realistic BSIM3 models for simulation. Finally, the performance comparison with respect to the measured results of reported works, using technology normalized figure of merit, has validated that the proposed circuit technique offers good PSR results while having the advantages of low quiescent power, small size, and full integration without any off-chip capacitor. The proposed regulator is particularly suitable for micropower sensor circuits.Index Terms-Bandgap voltage regulator, low power, power supply rejection, voltage regulator.

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Section: B Regulator Output Voltagementioning

confidence: 99%

“…Previous work [13] shows the difficulty in obtaining good PSR at high frequencies with a very low quiescent biasing current. Similarly, although an ultra low-power CMOS voltage reference [14] consumes 0. 24 , it has a PSR figure of only 28.5 dB at 1 kHz.…”

Section: Introductionmentioning

confidence: 99%

A Low Quiescent Biased Regulator With High PSR Dedicated to Micropower Sensor Circuits

Ong

Chan

2010

IEEE Sensors J.

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“…where T o is room temperature and a is characteristic current thermal coefficient, which depends on the CMOS process [11]. The value V TO ZERO is defined as the threshold voltage linear extrapolation to absolute zero and is given by…”

Section: Weak Inversion Operationmentioning

confidence: 99%

“…Equation (5) is a function of the transistor sizes and CMOS process parameters and thus independent of the transistor's gate-source voltage [12,11]. Note that the drain-source voltage that saturates transistor Q a does not depend on the gate-source voltage.…”

Section: Weak Inversion Operationmentioning

confidence: 99%

“…Therefore, they do not change despite power supply variations, due to the cascode composite MOS transistor effect [11,12]. Furthermore, since resistor R 1 is not directly connected to the power supply, the use of composite MOS transistor Q 1 and Q 3 provided improvements on line regulation and PSRR, reducing the bias current sensitivity to power supply variations, as compared to a single transistor circuit or the topology presented by Ferreira [12].…”

Section: Proposed Circuit and Analysismentioning

confidence: 99%

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A low-voltage low-power threshold voltage monitor for CMOS process sensing

Ferreira

2010

Analog Integr Circ Sig Process

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In this paper a low-voltage low-power threshold voltage monitor for CMOS process sensing is presented. This circuit works in weak inversion and it can be used as an elementary circuit block for on-chip compensation of the intra-die or inter-die threshold voltage variations in low-power analog and mixed-signal SoC, since it is robust to temperature and power supply voltage variations (similar to the bandgap voltage reference). The proposed threshold voltage monitor has been successfully verified in a standard 0.35-lm n-well CMOS TSMC process. Experimental results have confirmed that the circuit generates an average reference voltage of 758 mV (very close to the typical threshold voltage when extrapolated to absolute zero) for a 950 mV power supply voltage, with a variation of 39 ppm/°C for the -20 to 80°C temperature range.

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