An insight into the epitaxial nanostructures of NiO and CeO2 thin film dielectrics for AlGaN/GaN heterostructures

Nickel oxide thin films grown by chemical deposition techniques: Potential and challenges in next‐generation rigid and flexible device applications

“…Epitaxial films are also preferred in applications where high resistivity is required. This is due to the lower defect density in the epitaxial films with a near‐stoichiometric composition 54,55 . Achieving improved p‐type conductivity in epitaxial films requires doping, such as with Li (refer to Section 2).…”

“…However, the effect of the O 2 flow rates on the film stoichiometry cannot be excluded as the film composition was not measured 58 . The importance of the substrate and NiO x film stress is highlighted also by Lo Nigro et al who used CVD grown epitaxial NiO x thin films as dielectrics in wide band gap semiconductor AlGaN/GaN devices 54,55 . The dielectric properties of the films were determined from the C − V measurements, with relative permittivity ɛ r = 11.7.…”

“…The dielectric properties of the films were determined from the C − V measurements, with relative permittivity ɛ r = 11.7. The application of the 20 nm NiO x dielectric reduced the leakage current of the devices by 2‐3 orders of magnitude 54,55 …”

“…This is due to the lower defect density in the epitaxial films with a near-stoichiometric composition. 54,55 Achieving improved p-type conductivity in epitaxial films requires doping, such as with Li (refer to Section 2). 56 The majority of reports focus on process development and material characterization, and only a few papers present and discuss electrical properties of the films.…”

A Study on Annealing Process Influenced Electrical Properties of Ni/CeO2/p‐Si/Al Schottky Barrier Diodes

“…[ 1 ] To overcome these drawbacks, wide band gap oxides such as CeO 2 , Ta 2 O 5 , HfO 2 , and ZrO 2 , etc., employed due to their adequate dielectric constant, large band gap, chemical stability [ 2 ] and they became the prime constituent in majority of the microelectronic devices. [ 3 ] Among these cerium oxide (CeO 2 ) which possesses outstanding electrical properties due to its large band gap (∼6 eV), its higher permittivity (ɛ = 15–26) [ 4 ] and small lattice mismatch with silicon found applications in large ion storage capacity, [ 5 ] electro chromic device, [ 6 ] enhanced photo catalyst [ 7 ] and buffer layer [ 8 ] at the interface of ferroelectric films/Si substrate. In this work, we made an attempt to study the impact of annealing process on electrical parameters of the fabricated Ni/CeO 2 /p‐Si/Al metal‐insulator‐semiconductor (MIS) type SBD.…”