An improved thermal network model of the IGBT module for wind power converters considering the effects of base plate solder fatigue

Li, H; Yu, Hao; Liu, S Q; Li, Y; Liao, Xinglin; Liu, Z X

doi:10.1088/1755-1315/40/1/012001

Cited by 7 publications

(8 citation statements)

References 7 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…For making the equivalent STN can work well in more conditions, m groups of simulating or experimental results under different working conditions are requested. The indicator S, as shown in (20), is introduced to measure the comprehensive difference among virtual temperatures of the n branches in the m groups of results…”

Section: Thermal Network Modelmentioning

confidence: 99%

“…Some researchers thoroughly studied the influence of mutual thermal impedance and improved the thermal network used for IGBT junction temperature prediction [19]. Considering the effects of base plate solder fatigue, Li et al [20] proposed an improved thermal network model for IGBT modules. In [21], researchers modified the Cauer‐type thermal network model of an IGBT by considering error caused by cross‐heat transmission time delay.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Analytical model for predicting the junction temperature of chips considering the internal electrothermal coupling inside SiC metal–oxide–semiconductor field‐effect transistor modules

Sun

Zhao

Cai

et al. 2020

IET Power Electronics

View full text Add to dashboard Cite

Owing to their excellent characteristics, silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor modules are expected to have broad application prospects in various types of power conversion equipment in the future. Accurate prediction of the internal chip junction temperature of SiC module is of great value for the usage of the modules in the power conversion equipment. In this study, taking the electrothermal coupling process, and the thermal characteristics of the chips into consideration, the power loss model under unipolar and bipolar sinusoidal pulse-width modulation control was developed. A star-shaped equivalent thermal network model based on virtual temperature was established. Moreover, an analytical junction temperature predicting model was proposed. To obtain the temperature dependence of static and dynamic parameters for the models, power device analyser was used, and the double pulse test bench was established. To validate the effectiveness and accuracy of the above models, the finite element method was used to calculate the junction temperature of a commercial 1200 V/300 A full SiC module under different working conditions. The results show that the relative error is very small and the proposed model is effective.

show abstract

Section: Thermal Network Modelmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Analytical model for predicting the junction temperature of chips considering the internal electrothermal coupling inside SiC metal–oxide–semiconductor field‐effect transistor modules

Sun

Zhao

Cai

et al. 2020

IET Power Electronics

View full text Add to dashboard Cite

show abstract

“…Efficient optimization of these two objectives is necessary and must rely on an accurate mathematical representation of the powerelectronic system under study. Both objectives are mathematically linked together in this section, and the detailed derivations can be found in [12,[14][15][16][17][18][19][20]. If a sinusoidal current is flowing through a power-electronic module, PCQ and PCD can be formulated as in Equations (1) If a sinusoidal current is flowing through a power-electronic module, P CQ and P CD can be formulated as in Equations (1) and (2).…”

Section: Inverter Power Losses and Output Current Tddmentioning

confidence: 99%

“…As a PQ-controlled inverter, the load of this DG can be represented as an ideal grid voltage source in series with inductive element as shown in Figure 1. This assumption is applicable for motor-drive application as well [14][15][16]. During any switching period, the inductor current is assumed linear, either in charging or discharging mode, with a constant fundamental component.…”

Section: Oasf-algorithmmentioning

confidence: 99%

On the Performance Optimization of Two-Level Three-Phase Grid-Feeding Voltage-Source Inverters

2018

View full text Add to dashboard Cite

Abstract:The performance optimization of the two-level, three-phase, grid-feeding, voltage-source inverter (VSI) is studied in this paper, which adopts an online adaptive switching frequency algorithm (OASF). A new degree of freedom has been added to the employed OASF algorithm for optimal selection of the weighting factor and overall system optimization design. Toward that end, a full mathematical formulation, including the impact of the coupling inductor and the controller response time, is presented. At first, the weighting factor is selected to favor the switching losses, and the controller gains are optimized by minimizing the integral time-weighted absolute error (ITAE) of the output active and reactive power. Different loading and ambient temperature conditions are considered to validate the optimized controller and its fast response through online field programmable gate array (FPGA)-in-the-loop. Then, the weighting factor is optimally selected to reduce the cost of the L-filter and the heat-sink. An optimization problem to minimize the cost design at the worst case of loading condition for grid-feeding VSI is formulated. The results from this optimization problem are the filter inductance, the thermal resistance of the heat-sink, and the optimal switching frequency with the optimal weighting factor. The VSI test-bed using the optimized parameters is used to verify the proposed work experimentally. Adopting the OASF algorithm that employs the optimal weighting factor for grid-feeding VSI, the percentages of the reductions in the slope of the steady state junction temperature profile compared to fixed frequencies of 10 kHz, 14.434 kHz, and 20 kHz are about 6%, 30%, and 18%, respectively.

show abstract

“…In order to extract Tvj thermal-electric models can be employed in power electronics converters estimating Tvj from a temperature sensor adhered to the baseplate/heatsink [5]. It is well known that the estimated error of Tvj becomes smaller when using a more detailed and therefore complex model [6,7] to the expense of required computational resources. Another technique to obtain Tvj is to make use of Temperature Sensitive Electrical Parameters (TSEPs).…”

Section: Introductionmentioning

confidence: 99%

Prethreshold Voltage as a Low-Component Count Temperature Sensitive Electrical Parameter Without Self-Heating

Mandeya

Chen

Pickert

et al. 2018

IEEE Trans. Power Electron.

View full text Add to dashboard Cite

Temperature Sensitive Electrical Parameters (TSEPs) are promising for measurement of the IGBT junction temperature. Many TSEPs have been proposed in the literature and most require current sensors, and convoluted hardware and data processing, which are associated with increased complexity and cost. In this letter, a new TSEP is proposed called pre-threshold TSEP, VGE(pre-th). VGE(pre-th) requires only a voltage sensor and a counter. Besides less hardware requirement, VGE(pre-th) does not suffer from self-heating -a problem that most TSEPs encounter. This letter presents the operation of VGE(pre-th) with the help of simulation. Experimental tests on a 3.3kV, 800A IGBT were conducted to characterize VGE(pre-th). It is shown that the new TSEP proposed has a sensitivity of -2.2mV/°C.

show abstract

An improved thermal network model of the IGBT module for wind power converters considering the effects of base plate solder fatigue

Cited by 7 publications

References 7 publications

Analytical model for predicting the junction temperature of chips considering the internal electrothermal coupling inside SiC metal–oxide–semiconductor field‐effect transistor modules

Analytical model for predicting the junction temperature of chips considering the internal electrothermal coupling inside SiC metal–oxide–semiconductor field‐effect transistor modules

On the Performance Optimization of Two-Level Three-Phase Grid-Feeding Voltage-Source Inverters

Prethreshold Voltage as a Low-Component Count Temperature Sensitive Electrical Parameter Without Self-Heating

Contact Info

Product

Resources

About