2017 IEEE Transportation Electrification Conference and Expo, Asia-Pacific (ITEC Asia-Pacific) 2017
DOI: 10.1109/itec-ap.2017.8080764
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Cited by 4 publications
(2 citation statements)
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“…On the other hand, temperature sensitive electrical parameters (TSEPs) have recently been extensively studied and employed, like in [7][8][9][10][11]. Among others, on-state voltage, gate threshold voltage, short-circuit current and switching delay time are good indicators of the junction temperature [12]. Each of these methods presents, though, advantages and drawbacks.…”
Section: Introductionmentioning
confidence: 99%
“…On the other hand, temperature sensitive electrical parameters (TSEPs) have recently been extensively studied and employed, like in [7][8][9][10][11]. Among others, on-state voltage, gate threshold voltage, short-circuit current and switching delay time are good indicators of the junction temperature [12]. Each of these methods presents, though, advantages and drawbacks.…”
Section: Introductionmentioning
confidence: 99%
“…However, this method requires a pn-junction in the forward current path and is therefore not directly applicable for MOSFETs. In the past few years, several approaches have been proposed for online junction temperature estimation of SiC MOSFETs [13][14][15], whereas not all of them are applicable during standard power cycling tests. In addition to a direct temperature measurement on the chips surface [16], there are four indirect methods for estimating the junction temperature of a SiC MOSFET, which can be applied during power cycling.…”
Section: T Vj Estimation Methods For Sic Mosfets During Power Cyclingmentioning
confidence: 99%