2014 IEEE International Conference on Acoustics, Speech and Signal Processing (ICASSP) 2014
DOI: 10.1109/icassp.2014.6855225
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An energy-efficient VLSI architecture for pattern recognition via deep embedding of computation in SRAM

Abstract: In this paper, we propose the concept of compute memory, where computation is deeply embedded into the memory (SRAM). This deep embedding enables multi-row read access and analog signal processing. Compute memory exploits the relaxed precision and linearity requirements of pattern recognition applications. System-level simulations incorporating various deterministic errors from analog signal chain demonstrates the limited accuracy of analog processing does not significantly degrade the system performance, whic… Show more

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Cited by 131 publications
(67 citation statements)
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“…The MR-READ step begins with the application of access pulses simultaneously to the rows storing a ij and p j such that the pulse width T R BL C BL , where R BL C BL is the RC time constant of BL/BLB [2]. This results in a BL/BLB voltage (see Fig.…”
Section: A Compute Memory-based Address Decoder (Cm-ad)mentioning
confidence: 99%
See 2 more Smart Citations
“…The MR-READ step begins with the application of access pulses simultaneously to the rows storing a ij and p j such that the pulse width T R BL C BL , where R BL C BL is the RC time constant of BL/BLB [2]. This results in a BL/BLB voltage (see Fig.…”
Section: A Compute Memory-based Address Decoder (Cm-ad)mentioning
confidence: 99%
“…In the MR-READ operation, the V th variations were modeled as a Gaussian distributed random variable in [2]. In this paper, two binary numbers a and p (we omit indices i and j for simplicity) are MR-READ.…”
Section: A Behavioral Modelmentioning
confidence: 99%
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“…In the MR-READ operation [1]: (a) d is stored in one column, (b) B D word lines (WLs) are activated per precharge, and (c) the WL access pulse width T k ∝ 2 k (k ∈ [0, B D − 1]), i.e., the access pulses are pulse-width modulated. By ensuring that T k RC, where RC is the time constant of the bit lines BL and BLB, the BLB voltage drop at the end of the MR-READ process is given by [1]:…”
Section: Compute Memory (Cm)mentioning
confidence: 99%
“…Compute memory[1]: (a) architecture, (b) column structure of bit cell array (c) and the MR-READ waveform for 4-bit word read-out, D = 1111b'[1].…”
mentioning
confidence: 99%