An electrical characterization of a hetero-junction nanowire (NW) PN diode (n-GaN NW/p-Si) formed by dielectrophoresis alignment

Temperature dependence of electrical characteristics of n-In Ga1−N/p-Si hetero-junctions made totally by RF magnetron sputtering

“…Lee at al. reported electrical characterization of a hetero-junction nanowire n-GaN/p-Si diode formed by dielectrophoresis alignment [12]. The diode showed the well-defined current rectifying behavior with a forward voltage drop of 1.2-2.0 V at a current density of 10-60 A·cm −2 and high parasite resistance in the range of 447 kΩ.…”

Fabrication and Electrical Characterization of Heterojunction Mn-Doped GaN Nanowire Diodes on n-Si Substrates (GaN:Mn NW/n-Si)

“…A drop of the GaN:Mn NW suspensions ($3 lL) was placed on the selected n-and p-Si substrates (5 mm 9 5 mm 2 ) using a micropipette. 3,[8][9][10][11] Then an AC electric field was applied across the electrodes until the IPA evaporated, leaving the NWs in contact with both the electrical contact and substrate (Fig. 1e).…”

“…To assemble the dispersed NWs on Si substrates and to maximize the device performance with high driving current, the DAAD method represents an interesting approach to address the alignment difficulty. [8][9][10][11][12] Recently, we improved the DAAD method and demonstrated that this technique can readily be used to deposit semiconductor NWs on a selected area and position by controlling the applied frequency and the electric field to the electrodes. 3,12 A similar assembly approach has been published elsewhere.…”

“…We previously used this method to demonstrate the alignment of the nanoscale structure on the proper thin-film substrates for wafer-based integration. [8][9][10] We also discuss the conductivity type of GaN:Mn NWs using electrical transport measurements in p-n and p-p junction structures.…”

Uncovering Cortical Modularity by Nanotechnology

“…The issues faced by CNTs could be overcome by nanowires because of the reproducible control over size and electronic properties that current growth methods enable (Cui et al 2001b(Cui et al , 2003Cui and Lieber 2001;Wu et al 2004). A good class of NWs has been developed, ranging from NWs based on classic semiconductors, such as silicon NWs (Chen et al 2006;Goncher et al 2006;Yajie et al 2008), GaP (Dujavova-Laurencikova et al 2013), GaN (Lee et al 2007), CdS and ZnS (Barrelet et al 2003), heterostructures as Ge-Si (Xiang et al 2006a, b), InAs-InP (Jiang et al 2007), oxide nanowires MgO (Yin et al 2002), Cu 2 O (Jiang et al 2002), SiO 2 (Yu et al 1998;Liu et al 2001;Zheng et al 2002), Ga 2 O 3 Sharma and Sunkara 2002), Al 2 O 3 (Valcarcel et al 1998;Xiao et al 2002) (Zhou et al 2002), and others.…”