Abstract:Carbon nanotube field‐effect transistors (CNTFETs) have been widely studied as a promising technology to be included in post‐complementary metal‐oxide‐semiconductor integrated circuits. Despite significant advantages in terms of delay and power dissipation, the fabrication process for CNTFETs is plagued by fault occurrences. Therefore, developing a fast and accurate method for estimating the reliability of CNTFET‐based digital circuits was the main goal of this study. In the proposed method, effects related to… Show more
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