Search citation statements

Order By: Relevance

Paper Sections

Select...
3
2

Citation Types

0
12
0
1

Year Published

2018
2018
2023
2023

Publication Types

Select...
7

Relationship

2
5

Authors

Journals

citations
Cited by 38 publications
(13 citation statements)
references
References 42 publications
0
12
0
1
Order By: Relevance
“…Their technique achieves higher energy efficiency and performance compared to general-purpose processor and DRAM-based PIM techniques. Lebdeh et al [76] presented a design for implementing stateful XNOR/XOR gate in MCA. Their design uses two "bipolar memristors (BMs)" for storing input and one "unipolar memristor (UM)" for storing the output.…”
Section: Arithmetic and Logical Operationsmentioning
confidence: 99%
See 1 more Smart Citation
“…Their technique achieves higher energy efficiency and performance compared to general-purpose processor and DRAM-based PIM techniques. Lebdeh et al [76] presented a design for implementing stateful XNOR/XOR gate in MCA. Their design uses two "bipolar memristors (BMs)" for storing input and one "unipolar memristor (UM)" for storing the output.…”
Section: Arithmetic and Logical Operationsmentioning
confidence: 99%
“…The limitation of their design is that it needs both bipolar and unipolar memristors and uses multiple voltage levels. [76]).…”
Section: Arithmetic and Logical Operationsmentioning
confidence: 99%
“…[ 19 ] Recently, several studies have reported the use of one transistor–one resistor devices (1T1R) as binary XNOR cells to reduce data storage and transfer. [ 19–21 ] In addition, implementation of XNOR gates using two RRAM devices with complementary encoding has been demonstrated. [ 22 ] However, to implement XNOR cell‐based high‐density arrays, it is necessary to execute the XNOR function using a simple structure and two‐terminal‐based 1S1R devices.…”
Section: Introductionmentioning
confidence: 99%
“…Emerging resistive random-access memory (RRAM) technology such as the memristor (MR), postulated by Chua in 1971 [13], is a two-terminal element that plays a great role in the electronic technology due to its low power consumption, highdensity integration and fast write/read operations [14]. Additionally, the ability of MRs to retain their resistance state makes them suitable for non-volatile RRAM, programmable logic and in-memory computing applications [15,16]. Besides using MRs in two-level memories, MRs can also store multiple bits in a single memory cell to form the multi-level cell (MLC), which leads to dense and power-efficient memories [17][18][19].…”
Section: Introductionmentioning
confidence: 99%