An easily integrable NiSi TOSI-gate/SiON-module for LP SRAM applications based on a single step silicidation of gate and junction

Abstract

In this paper, we present a CMOS NiSi Totally SIlicided (TOSI)-gate on SiON module, based on a single step silicidation of the junctions and the total gate, and demonstrate its industrial feasibility on SRAM demonstrators. The single step silicidation is achieved by the use of an ultra-low initial Si gate electrode and selective S/D epitaxy, which allows us to avoid any additional CMP step. We show excellent transistor morphology, good device results and first functional NiSi TOSI-gate SRAMs in a stateof-the-art industrial cell size indicating the potential of our TOSI integration module for LP applications.

Totally Silicided (TOSI) Gates as an evolutionary metal gate solution for advanced CMOS technologies

“…At this point the gate predoping for NiSi work function adjustment can be carried out.~~~~Ñet th.oyS scpe ya xd In Figure 8 In the following, we show that, due to its due to the coexistence of the Ni rich phase Ni2Si at integration simplicity, our CMP-less TOSI-gate the top and NiSi at the bottom of the gate. Finally, approach is suitable for a full CMOS flow, as it has Figure 9 demonstrates the suppression of the poly-been presented in more detail in [18]. depletion after total gate silicidation, which can be deduced from the increase of the capacitance value in the inversion regime.…”