2009
DOI: 10.4028/www.scientific.net/kem.416.354
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Jian Xiu Su, Yin Xia Zhang, Xi Qu Chen, Bin Feng Yang, Dong Ming Guo

Abstract: The components of material removal in wafer Chemical mechanical polishing (CMP) was described qualitatively based on theory of corrosive wear. The value of each component was obtained by a series of wafer CMP experiments. According to analyzing the experiment results, some conclusions are obtained as follows. There is an optimum polish velocity in wafer CMP at a certain parameter. Under the optimum velocity, the balance of interaction between the mechanical action and the chemical action is reached and the mat…

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