Amorphous silicon deposited by xenon ion beam assisted deposition

Barbieri, P.F.; Oliveira, M. A. L.; Champi, A.; Marques, F. C.

doi:10.1016/j.jnoncrysol.2005.11.072

Cited by 2 publications

(2 citation statements)

References 15 publications

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“…%, in the 0 to approximately Ϫ150 V range, and then decreases for the rest of ion energies ͑proportional to the bias voltage͒ investigated in this work. This behavior is very similar to that obtained with Xe introduced into amorphous silicon 43,44 deposited by the IBAD technique, in which Xe atoms are introduced into the film using an ion gun to assist the deposition. A similar phenomenon has been reported in tetrahedral amorphous carbon ͑ta-C͒ deposited by FCVA, considering the concentration of sp 3 hybridization as a function of C + ion energy.…”

Section: A Kr/c Compositionsupporting

confidence: 75%

Influence of krypton atoms on the structure of hydrogenated amorphous carbon deposited by plasma enhanced chemical vapor deposition

Oliveira

Viana

Lima

et al. 2010

Journal of Applied Physics

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Hydrogenated amorphous carbon ͑a-C:H͒ films were prepared by plasma enhanced chemical vapor deposition using methane ͑CH 4 ͒ plus krypton ͑Kr͒ mixed atmosphere. The depositions were performed as function of the bias voltage and krypton partial pressure. The goal of this work was to study the influence of krypton gas on the physical properties of a-C:H films deposited on the cathode electrode. Krypton concentration up to 1.6 at. %, determined by Rutherford Back-Scattering, was obtained at high Kr partial pressure and bias of Ϫ120 V. The structure of the films was analyzed by means of optical transmission spectroscopy, multi-wavelength Raman scattering and Fourier Transform Infrared spectroscopy. It was verified that the structure of the films remains unchanged up to a concentration of Kr of about 1.0 at. %. A slight graphitization of the films occurs for higher concentration. The observed variation in the film structure, optical band gap, stress, and hydrogen concentration were associated mainly with the subplantation process of hydrocarbons radicals, rather than the krypton ion energy.

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Section: A Kr/c Compositionsupporting

confidence: 75%

Influence of krypton atoms on the structure of hydrogenated amorphous carbon deposited by plasma enhanced chemical vapor deposition

Oliveira

Viana

Lima

et al. 2010

Journal of Applied Physics

View full text Add to dashboard Cite

show abstract

“…This also indicates that the a-Si network is denser in this energy range. In fact, it is known that the densification of the films 26 is a primary effect of noble gas bombardment as reported by Craigen and Brodie 27 who found that a-Si is denser when bombarded with argon atoms with about 100 eV.…”

mentioning

confidence: 97%

Electronic and structural properties of implanted xenon in amorphous silicon

Barbieri

Landers

Marques

2007

Applied Physics Letters

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The electronic and structural characteristics of xenon implanted in amorphous silicon are investigated. A different implantation approach, in which xenon atoms are implanted during the film deposition, was developed. Up to about 5at.% of xenon were implanted at energy as low as 100eV. X-ray absorption spectroscopy reveals that xenon atoms are dispersed in the amorphous Si network. The xenon 3d5∕2 binding energy, from x-ray photoelectron spectroscopy, as well as the initial state contribution and relaxation energy, from x-ray excited Auger electron spectroscopy, depend on the implantation energy and indicate that the xenon atoms are trapped in voids of different sizes.

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Amorphous silicon deposited by xenon ion beam assisted deposition

Cited by 2 publications

References 15 publications

Influence of krypton atoms on the structure of hydrogenated amorphous carbon deposited by plasma enhanced chemical vapor deposition

Influence of krypton atoms on the structure of hydrogenated amorphous carbon deposited by plasma enhanced chemical vapor deposition

Electronic and structural properties of implanted xenon in amorphous silicon

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