Amorphous oxide channel TFTs

Metal oxide semiconductor thin-film transistors for flexible electronics

“…114,155 Since standard PI exhibits a yellowish to brownish color, other polymeric substrates have been introduced to benefit from their transparency in the visual wavelength range. These materials, which are, in general, also cheaper and more easily available, include PET, 29,69,96,165,171,180,184,188 polyethylene naphthalate (PEN), 38,40,41,134,136,139,149,153,158,163,[166][167][168]173,181,202 polyetheretherketone (PEEK), 203 polycarbonate (PC), 154,157 polypropylene (PP) based synthetic paper, 204 parylene, 80,141 polyethersulfone (PES), 178 water-soluble polyvinyl alcohol (PVA), 82 as well as polydimethylsiloxane (PDMS). 78,132,147,[205][206][207] In particular, PDMS is also stretchable and biocompatible, but at the same time hard to process using standard fabrication techniques.…”

“…Employed materials with a higher R include hafnium oxide (HfO 2 ), 177,180,181 hafnium lanthanum oxide (HfLaO), 170 titanium oxide (TiO 2 ), 154 and yttrium oxide (Y 2 O 3 ). 29,69 The drawback of these dielectrics is a scarcer availability, a worst interface quality, as well as a reduced compatibility with the TFT fabrication process. 171 SiN x is only rarely used in the community.…”

“…Nomura's report paved the way to an impressive number of publications on metal oxide semiconductor TFTs. In the following years, several multicomponent metal oxide semiconductors, ranging from zinc tin oxide (ZTO), 64,65 indium zinc oxide (IZO) 66 to IGZO (the most common), [67][68][69] were investigated. From 2005, also the first reports on hole transporting (p-type) metal oxide semiconductors appeared.…”

Effects of dopants in InOx-based amorphous oxide semiconductors for thin-film transistor applications

“…Each value was extracted from the linear region of the output characteristics at V GS ¼ 30 V. Similar to other metal oxide semiconductors such as IGZO 20,21 and ZnO, 22 the electrical conductivity of the InO xbased films depends on the O 2 partial pressure; this behavior is caused by the strong dependence of the carrier concentration on the O 2 partial pressure used during deposition. 23,24 Although the dopant concentration is only 1 wt.…”

A protective layer on the active layer of Al‐Zn‐Sn‐O thin‐film transistors for transparent AMOLEDs

“…The conventional a-Si TFT can be fabricated with high uniformity and at a low cost, but its mobility and bias stability are poor, and the LTPS (lowtemperature polysilicon) TFT is not ideal for large-size production due to its relatively poor uniformity and high cost. [5][6] Oxide TFTs such as ZnO [7], In-Zn-O [8], Zn-Sn-O [9], and IGZO [10][11] TFTs have been widely studied. Oxide TFTs with an active layer composed of Al 2 O 3 -ZnO-SnO 2 (AZTO) and sputtered at room temperature have been reported by these researchers.…”