Amorphous/Microcrystalline Silicon Thin Film Transistor Characteristics for Large Size Oled Television Driving

Tsujimura, Takatoshi

doi:10.1143/jjap.43.5122

Cited by 41 publications

(24 citation statements)

References 9 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…For example, the threshold voltage shift of a-Si:H TFT is still a serious issue for OLED displays. 13) The degradation mechanisms in a-Si:H TFTs under bias-temperature (BT) and drain current stresses have been studied extensively. [13][14][15][16] Based on these studies, electrical and environmental stabilities of oxide TFTs have been investigated very recently.…”

Section: Introductionmentioning

confidence: 99%

“…13) The degradation mechanisms in a-Si:H TFTs under bias-temperature (BT) and drain current stresses have been studied extensively. [13][14][15][16] Based on these studies, electrical and environmental stabilities of oxide TFTs have been investigated very recently. [17][18][19][20][21][22][23][24][25][26]28) It was reported that negative charge trapping in an oxide semiconductor and its interface with a gate insulator or charge trapping in a gate insulator plays important roles in determining positive BT instability of oxide TFTs.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Positive Bias Instability of Bottom-Gate Zinc Oxide Thin-Film Transistors with a SiO_x/SiN_x-Stacked Gate Insulator

Furuta¹,

Kamada

Hiramatsu³

et al. 2011

Jpn. J. Appl. Phys.

View full text Add to dashboard Cite

The positive bias instabilities of the zinc oxide thin-film transistors (ZnO TFTs) with a SiO x /SiN x -stacked gate insulator have been investigated. The film quality of a gate insulator of SiO x , which forms an interface with the ZnO channel, was varied by changing the gas mixture ratio of SiH 4 / N 2 O/N 2 during plasma-enhanced chemical vapor deposition. The positive bias stress endurance of ZnO TFT strongly depended on the deposition condition of the SiO x gate insulator. From the relaxations of the transfer curve shift after imposition of positive bias stress, transfer curves could not be recovered completely without any thermal annealing. A charge trapping in a gate insulator rather than that in bulk ZnO and its interface with a gate insulator is a dominant instability mechanism of ZnO TFTs under positive bias stress. #

show abstract

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Positive Bias Instability of Bottom-Gate Zinc Oxide Thin-Film Transistors with a SiO_x/SiN_x-Stacked Gate Insulator

Furuta¹,

Kamada

Hiramatsu³

et al. 2011

Jpn. J. Appl. Phys.

View full text Add to dashboard Cite

show abstract

“…Therefore a challenge, complementary to oxide semiconductor research, especially on plastic, is to identify a gate dielectric material and process that enable low voltage operation, reliability and stability with low device off-state current. Active electronic identification tags, for example, need sub-5 V operation [4], and OLEDs require high drive currents at typically less than 10 V [10]. For active-matrix driven LCDs, the static off-state current should be 0.1-1.0 pA [8].…”

Section: Overviewmentioning

confidence: 99%

Application of Transparent Oxide Semiconductors for Flexible Electronics

Carcia

2010

Transparent Electronics

View full text Add to dashboard Cite

Electronics on flexible plastic substrates [1,2] are attractive for portable applications, because plastic is lighter weight, thinner, bendable, and more rugged than glass. Flexible plastic substrates can also be processed reel-to-reel, which should reduce manufacturing cost. Some applications envisioned for flexible electronics include (rollable) displays [3], low cost radio frequency identification (RFID) tags [4], and large area or macroelectronics [5], in general.Plastic substrates, however, are temperature sensitive. Common, inexpensive, plastic substrates, such as poly(ethylene terephthalate) (e.g. PET-Mylar Ò ), can withstand processing only up to $100 C, while poly(ethylene naphthalate) (PEN), in the same polyester family, can be used up to $200 C. (More detail about plastic substrates will be given later in this chapter). However, low mobility ($1 cm 2 V À1 s À1 ), amorphous silicon (a-Si) device technology [6,7], used in liquid crystal displays (LCDs) [8] for laptop computers and large screen flat-panel TVs, requires processing up to 350 C. Moreover, higher performance electronics, based on high mobility ($100 cm 2 V À1 s À1 ) polycrystalline Si technology [6,9], which drives newer organic light emitting displays (OLEDs) [10], require still higher process temperatures, $600 C. (A high mobility translates into a higher output current, and lower voltage and higher frequency operation). However, post-annealing processes used in Transparent Electronics: From Synthesis to Applications Edited by Antonio Facchetti and Tobin J. Marks

show abstract

“…Thin-film manufacturing methods using gas mixtures consisting of two or more gases such as SiH 4 -CH 4 and CH 4 -H 2 are used for the production of thin-film transistors and various other electronic devices, and of diamonds and other industrial products [1,2]. Among these methods, the gas decomposition method using a radio frequency glow discharge is often used for the manufacture of amorphous silicon semiconductor thin films because of its excellent control of plasma parameters and the potential for expansion of the film surface areas [3,4].…”

Section: Introductionmentioning

confidence: 99%

Optical emission spectroscopy of glow discharge plasma from SiH₄−CH₄ system

Motohashi

Ashibu

Hiruta

et al. 2007

Electron Comm Jpn Pt II

View full text Add to dashboard Cite

SUMMARYWe used plasma optical emission spectroscopy to investigate the plasma state generated by a radio frequency glow discharge in a monosilane and methane gas mixture. To produce the glow discharge in the gas, we used the source gases separated plasma CVD (SSP-CVD) method proposed in this research, and the conventional diode method. We studied the flow rate ratio and the radio frequency power dependence of the source gases with the plasma optical emission characteristics generated using these methods, and investigated the relationship between the optical emission states and bond states of the elements in films. We found that the optical emission intensities of SiH and CH radicals in the plasma are related to the carbon content and C-Si-H bonds in a-SiC:H films. Furthermore, we found that more H 2 radicals than H radicals exist in plasmas generated by the SSP-CVD method than in those generated by the conventional method. We used the above results to study the decomposition process of SiH 4 -CH 4 gases.

show abstract

Amorphous/Microcrystalline Silicon Thin Film Transistor Characteristics for Large Size Oled Television Driving

Cited by 41 publications

References 9 publications

Positive Bias Instability of Bottom-Gate Zinc Oxide Thin-Film Transistors with a SiO_x/SiN_x-Stacked Gate Insulator

Positive Bias Instability of Bottom-Gate Zinc Oxide Thin-Film Transistors with a SiO_x/SiN_x-Stacked Gate Insulator

Application of Transparent Oxide Semiconductors for Flexible Electronics

Optical emission spectroscopy of glow discharge plasma from SiH₄−CH₄ system

Contact Info

Product

Resources

About

Amorphous/Microcrystalline Silicon Thin Film Transistor Characteristics for Large Size Oled Television Driving

Cited by 41 publications

References 9 publications

Positive Bias Instability of Bottom-Gate Zinc Oxide Thin-Film Transistors with a SiOx/SiNx-Stacked Gate Insulator

Positive Bias Instability of Bottom-Gate Zinc Oxide Thin-Film Transistors with a SiOx/SiNx-Stacked Gate Insulator

Application of Transparent Oxide Semiconductors for Flexible Electronics

Optical emission spectroscopy of glow discharge plasma from SiH4−CH4 system

Contact Info

Product

Resources

About

Positive Bias Instability of Bottom-Gate Zinc Oxide Thin-Film Transistors with a SiO_x/SiN_x-Stacked Gate Insulator

Positive Bias Instability of Bottom-Gate Zinc Oxide Thin-Film Transistors with a SiO_x/SiN_x-Stacked Gate Insulator

Optical emission spectroscopy of glow discharge plasma from SiH₄−CH₄ system