“…Ge nanowire diameters, with sub-20 nm dimensions, has been reported from solid metal seeds in sub-eutectic, VSS-like growth processes 14,20,26 . Sub-eutectic metal catalysts, such as Ni, Co, Pt, Fe, used for Si or Ge nanowire growth, have high melting points and are therefore resistant to pronounced surface diffusion during nanowire growth.…”