2009
DOI: 10.1039/b817391e
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Alternative catalysts for VSS growth of silicon and germanium nanowires

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Cited by 140 publications
(128 citation statements)
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References 61 publications
(97 reference statements)
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“…Ge nanowire diameters, with sub-20 nm dimensions, has been reported from solid metal seeds in sub-eutectic, VSS-like growth processes 14,20,26 . Sub-eutectic metal catalysts, such as Ni, Co, Pt, Fe, used for Si or Ge nanowire growth, have high melting points and are therefore resistant to pronounced surface diffusion during nanowire growth.…”
Section: Introductionmentioning
confidence: 96%
See 1 more Smart Citation
“…Ge nanowire diameters, with sub-20 nm dimensions, has been reported from solid metal seeds in sub-eutectic, VSS-like growth processes 14,20,26 . Sub-eutectic metal catalysts, such as Ni, Co, Pt, Fe, used for Si or Ge nanowire growth, have high melting points and are therefore resistant to pronounced surface diffusion during nanowire growth.…”
Section: Introductionmentioning
confidence: 96%
“…[1][2][3][4][5][6][7][8] The integration of semiconductor nanowires into device geometries 9 requires control over their morphology, dimensions, growth orientation, crystal phase and structural defects. Catalytic bottom-up approaches, such as vapor-liquid-solid (VLS) [10][11][12] , vapor-solid-solid (VSS) [13][14] , supercritical fluid-liquid-solid (SFLS) [15][16][17] techniques, are popular routes for growing high-aspect ratio one-dimensional nanostructures [18][19] , where nanowire diameters can be controlled by the dimension of the catalysts. 20 Control over nanowire diameters, in turn, facilitates regulation over their growth orientation.…”
Section: Introductionmentioning
confidence: 99%
“…We surmise that the platelets grow with a faceted dendritic mechanism known for larger crystals nucleated by titanium silicide catalyst islands. Silicon nanowires have most typically been grown using gold droplets to catalyze growth at the nanowire end facet via the vapor liquid-solid (VLS) mechanism, 1, 2 though a number of other catalysts have been studied, 3,4 in part to avoid the problems of the midgap states from the fast-diffusing gold impurity in silicon. 5 Titanium, deposited in thin layers and annealed to form titanium silicide islands, can catalyze silicon nanowires with a vapor-solid-solid (VSS) mechanism.…”
mentioning
confidence: 99%
“…It was previously reported that silicide could be employed as a catalyst for Si nanowire growth. [6][7][8] The direction of the Si nanowire is Si[111] as shown in Fig. 4(b 47 , is not identified in detail.…”
Section: Methodsmentioning
confidence: 99%
“…Alternative catalysts for vapor-solid-solid (VSS) growth have been proposed with advantages such as reduced growth temperature, lower levels of undesired impurity doping, and the formation of an abrupt heterointerface. 6,7 Various types of metal catalysts have been employed for VSS growth. However, it should be noted that the resulting nanowire products were strongly faceted, such as for example, in the case of Pd catalyst.…”
Section: Introductionmentioning
confidence: 99%