Alternating-strain-induced drift of nonequilibrium charge carriers in GaAs photodetectors

Acoustoelectric transient spectroscopy of microwave treated GaAs-based structures

“…The influence of some factors, such as radiation, is studied completely enough [1,2]. In recent years, a number of papers are devoted to the new influence methods, such as ultrasonic treatment [3,4] or microwave (MW) electromagnetic irradiation [57]. For example, it is shown that MW treatment leads to relaxation of the internal mechanical strain of the Schottkybarrier GaAs structures [5], redistribution of the impurities [5,6], gettering of the point defects [7].…”