All-silicon quantum light source by embedding an atomic emissive center in a nanophotonic cavity

Redjem, Walid; Zhiyenbayev, Yertay; Qarony, Wayesh; Ivanov, V. Yu.; Papapanos, Christos; Liu, Wei; Jhuria, Kaushalya; Balushi, Zakaria Al; Dhuey, Scott; Schwartzberg, Adam M.; Tan, Liang; Schenkel, T.; Kanté, Boubacar

doi:10.48550/arxiv.2301.06654

Cited by 4 publications

(4 citation statements)

References 29 publications

(30 reference statements)

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“…When this is done together with other photophysical properties such as emission spectrum, this can lead to a convincing case for the proposed atomic structure to be responsible for the 2 eV quantum emitter in hBN. This also opens a way to address the atomic structures of fluorescent defects in other materials systems, such as TMDs [29,37,38], silicon carbide [39], and silicon [40].…”

Section: Discussionmentioning

confidence: 99%

Polarization dynamics of solid-state quantum emitters

Kumar¹,

Samaner²,

Cholsuk³

et al. 2023

Preprint

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Quantum emitters in solid-state crystals have recently attracted a lot of attention due to their simple applicability in optical quantum technologies. Color centers such as fluorescent defects hosted by diamond and hexagonal boron nitride (hBN) emit single photons at room temperature and can be used for nanoscale sensing. The atomic structure of the hBN defects, however, is not yet well understood. In this work, we fabricate an array of identical hBN emitters by localized electron irradiation. This allows us to correlate the dipole orientations with the host crystal axes. The angle of excitation and emission dipoles relative to the crystal axes are also calculated using density functional theory, which reveals characteristic angles for every specific defect. Moreover, we also investigate the temporal polarization dynamics and discover a mechanism of time-dependent polarization visibility and dipole orientation of color centers in hBN and diamond. This can be traced back to the excitation of excess charges in the local crystal environment. We therefore provide a promising pathway for the identification of color centers as well as important insight into the dynamics of solid-state quantum emitters.

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Section: Discussionmentioning

confidence: 99%

Polarization dynamics of solid-state quantum emitters

Kumar¹,

Samaner²,

Cholsuk³

et al. 2023

Preprint

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“…Upon submission of the manuscript, we became aware of a related work on G-centers in nanophotonic silicon resonators [44].…”

Section: Notementioning

confidence: 99%

Purcell enhancement of single photon emitters in silicon

Gritsch¹,

Ulanowski²,

Reiserer³

2023

Preprint

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Individual spins that are coupled to telecommunication photons offer unique promise for distributed quantum information processing once a coherent and efficient spin-photon interface can be fabricated at scale. We implement such an interface by integrating erbium dopants into a nanophotonic silicon resonator. We achieve spin-resolved excitation of individual emitters with < 0.1 GHz spectral diffusion linewidth. Upon resonant driving, we observe optical Rabi oscillations and singlephoton emission with a 60-fold Purcell enhancement. Our results establish a promising new platform for quantum networks.

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“…Very recently, silicon emitters directly incorporated into photonic cavities have show order of magnitude lifetime reductions. 32,38…”

Section: Nanophotonic Cavity Estimatesmentioning

confidence: 99%

“…Compared to heterogeneous approaches, in which the quantum host and photonic layer are distinct materials, silicon colour centre architectures reduce the number of interfaces responsible for loss and decoherence. There have been three categories of focus: (1) bright emitters without ground state spins, such as the G, [28][29][30][31][32] C, 33 and W 34,35 centres, ( 2) dim yet high-efficiency emitters with optical access to spins such as erbium, 23,30,[36][37][38] and finally (3) the T centre, which offers relatively bright photon emission as well as direct access to long-lived spins. Here we present progress integrating silicon T centres with nanophotonic devices and characterize the resulting spin-photon interface for application in quantum networks.…”

Section: Introductionmentioning

confidence: 99%

Integrated silicon T centers for quantum technologies

Higginbottom¹,

DeAbreu²,

Bowness³

et al. 2023

Quantum Computing, Communication, and Simulation III

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The performance of modular, networked quantum technologies will be contingent upon the quality of their light-matter interconnects. Solid-state colour centres, and in particular T centres in silicon, offer competitive technological and commercial advantages as the basis for quantum networking and distributed quantum computing. These newly rediscovered silicon defects offer direct telecommunications-band photonic emission, long-lived electron and nuclear spins, and proven integration into industry-standard, CMOS-compatible, silicon-on-insulator (SOI) photonic chips at scale. Here we present recent advances with T centre devices towards high-performance, large-scale distributed quantum technologies based upon T centres in silicon.

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All-silicon quantum light source by embedding an atomic emissive center in a nanophotonic cavity

Cited by 4 publications

References 29 publications

Polarization dynamics of solid-state quantum emitters

Polarization dynamics of solid-state quantum emitters

Purcell enhancement of single photon emitters in silicon

Integrated silicon T centers for quantum technologies

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