2017
DOI: 10.1016/j.solmat.2016.12.017
|View full text |Cite
|
Sign up to set email alerts
|

All-oxide solar cells based on electrodeposited Cu2O absorber and atomic layer deposited ZnMgO on precious-metal-free electrode

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
4
1

Citation Types

4
20
0

Year Published

2017
2017
2023
2023

Publication Types

Select...
6
1

Relationship

2
5

Authors

Journals

citations
Cited by 46 publications
(25 citation statements)
references
References 56 publications
4
20
0
Order By: Relevance
“…Both samples contain the characteristic peaks of Mg 1 s, C 1 s, O 1 s, Zn 2p 3/2 and 2p 1/2. From Figure b, we observe that the characteristic peak of Mg 1 s is observed at about 1304.3 eV, which corresponds to the Mg‐O binding energy . The energy spectra of C 1 s appears two broad peaks at 284.8 eV and 289.0 eV (as shown Figure c), coming from the C‐C bonds and C‐O bonds, respectively.…”
Section: Resultsmentioning
confidence: 79%
“…Both samples contain the characteristic peaks of Mg 1 s, C 1 s, O 1 s, Zn 2p 3/2 and 2p 1/2. From Figure b, we observe that the characteristic peak of Mg 1 s is observed at about 1304.3 eV, which corresponds to the Mg‐O binding energy . The energy spectra of C 1 s appears two broad peaks at 284.8 eV and 289.0 eV (as shown Figure c), coming from the C‐C bonds and C‐O bonds, respectively.…”
Section: Resultsmentioning
confidence: 79%
“…Cu2O layers can be produced from Cu sheets by no-vacuum techniques, such as thermal oxidation. 1 Zhu (2004) has conducted copper oxide kinetic studies in the temperature range of 350 ° C to 550 ° C for the formation of copper oxide. 2 In addition, at a temperature of 200 °C for 10 minutes in the air had started to form CuO copper to a temperature of 300 ° C to form Cu2O.…”
Section: Introductionmentioning
confidence: 99%
“…The material has a band gap of * 2 eV [15], which means that a maximum efficiency of 20% [16] (Shockley-Queisser limit) can be achieved. Cu 2 O is mainly prepared by Cu sheet oxidation at high temperatures ([ 1000°C) [17][18][19][20] and by electrochemical deposition (ECD) at temperatures well below 100°C [7,8,[21][22][23][24]. The first method is particularly energy-intensive, but delivers high power conversion efficiencies, with the current record being 8.1% [17].…”
Section: Introductionmentioning
confidence: 99%
“…Alternatively, the electron affinity of materials such as ZnO can be modified by alloying them, either on the anion or the cation site [31], to decrease the large conduction band offset of 0.9 eV for ZnO/Cu 2 O heterojunctions [30,32]. For example, Mg doping of ZnO lowers the electron affinity and widens the band gap, leading to an improved conduction band alignment with the Cu 2 O absorber and a higher opencircuit voltage compared to intrinsic ZnO [24,33,34]. However, film compositions containing more than 20 mol % of Mg are shown to result in a drastic deterioration of the PV performance [24,33], that may be related to deep-level traps [35].…”
Section: Introductionmentioning
confidence: 99%
See 1 more Smart Citation