All dielectric metasurface nano-fabrication based on TiO2 phase shifters

Lee, Jeong Yub; Kim, Jae-Kwan; Yang, Ki Yeon; Kim, Yongsung; Song, Byonggwon; Jang, Jaeduck; Sul, Soohwan; Lee, Chang Seung

doi:10.1117/12.2272148

Cited by 4 publications

(2 citation statements)

References 10 publications

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“…Among all dielectric metasurfaces [1][2][3][4] studied so far, silicon (Si) nanostructures take a great advantage of high refractive index (n>3.5 at visible and infrared wavelengths) for extending optical phase shifts and compatibility with conventional processes for Si-based electro-optic sensors [4][5][6][7][8][9]. Non-crystalline, amorphous Si (a-Si) metasurfaces are widely adopted for various optical applications of beam deflectors, spectrometers, optical filters, and flat lenses within the low-loss range of extinction coefficient (k<1×10 −5 ) at infrared wavelengths [4][5][6][7][8].…”

Section: Introductionmentioning

confidence: 99%

CMOS-compatible Si metasurface at visible wavelengths prepared by low-temperature green laser annealing

et al. 2018

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A low-temperature laser crystallization is newly devised for producing polycrystalline silicon (poly-Si) thin films of low-loss, low surface roughness enough for nanoscale patterning, applicable to practical Si metasurface elements on complementary metal-oxide semiconductor (CMOS) electronic architectures in visible lights. The method is based on dielectric encapsulation of an amorphous Si film and subsequent laser-induced local crystallization. Such poly-Si thin film yields order-of-magnitude smaller surface roughness and grain size than those obtained with the conventional laser annealing processes. The mechanism of the formation of small and uniform crystalline grains during solidification is studied to ensure the smooth surfaces enough for nanoscale patterning. By obtaining root mean square of surface roughness <2.49 nm and extinction coefficient <4.8×10 -2 at 550 nm, visible metasurface color-filter elements are experimentally demonstrated with the resonant transmission-peak efficiency approaching ∼85%. This low-loss poly-Si metasurface is favorably compatible with embedded CMOS electronic architectures in contrast to the conventional thermal annealing processes that often cause failure of electrical device functionalities due to delamination and material-property degradation problems. The proposed fabrication in this study provides a practical method for further development of various Si metasurfaces in the visible domain and their integration with CMOS electronic devices as well.

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Section: Introductionmentioning

confidence: 99%

CMOS-compatible Si metasurface at visible wavelengths prepared by low-temperature green laser annealing

et al. 2018

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“…Semiconductor and dielectric metasurface devices have recently emerged as alternatives to plasmonic materials in compact optical systems [1][2][3][4][5][6][7][8][9][10]. High refractive index (e.g., silicon and III−V compound semiconductors) subwavelength structures can exhibit overlapping multipolar resonances, enabling extraordinary optical functions.…”

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53‐4: Dielectric Metasurfaces: Design for Manufacturability

Ahmed

2020

Symp Digest of Tech Papers

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Metasurface systems are enabling new classes of optical elements through spatial-phase engineering. Prior works focused on the role of refractive index of the material used to build the metasurface on efficiency and numerical aperture of metasurface lenses. In this work we focus on the issue of manufacturing tolerances of metasurfaces for infrared and visible optical waves, and specifically on the role the dielectric refractive index plays. A simple model system represented by simple analytical equations is used to extract proxy parameters that have an impact on the tolerance to manufacturing errors. These proxy parameters include rate of change of phase with particle size. It is found that although higher refractive index materials (e.g. Si) can provide better performance than lower refractive index materials (e.g. Si3N4), the relative tolerance to manufacturing errors is better for smaller index materials. This poses a challenge to the manufacturability of metasurfaces using relatively high refractive index, and brings attention to materials with medium refractive index (e.g. TiO2) to strike a balance between high performance and manufacturability of metasurface devices.

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Dielectric metasurfaces: From wavefront shaping to quantum platforms

Huang

et al. 2020

Progress in Surface Science

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All dielectric metasurface nano-fabrication based on TiO2 phase shifters

Cited by 4 publications

References 10 publications

CMOS-compatible Si metasurface at visible wavelengths prepared by low-temperature green laser annealing

CMOS-compatible Si metasurface at visible wavelengths prepared by low-temperature green laser annealing

53‐4: Dielectric Metasurfaces: Design for Manufacturability

Dielectric metasurfaces: From wavefront shaping to quantum platforms

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