AlGaN ultraviolet photodetectors grown by molecular beam epitaxy on Si(111) substrates

High photo-responsivity ZnO UV detectors fabricated by RF reactive sputtering

“…Compared to UV detectors made from semiconductor materials, such as Si [5,6], SiC [6], GaN [7,8], AlGaN [9,10], ZnO based UV detectors [11,12] have been studied intensively. ZnO is considered a promising UV semiconductor detector owing to its wide direct band-gap energy (3.37 eV), very large exciton binding energy of 60 meV at room temperature, excellent optical and electrical properties, outstanding chemical and thermal stability, higher radiation hardness and low growth temperature, as well as rich raw materials [13][14][15].…”

Dynamics of AlGaN based detectors in the deep-UV

“…To this aim, AlGaN alloys have demonstrated good detection performances for cw sources in the 240-280 nm spectral region, and different device structures have been proposed for the fabrication of UV detectors [5][6][7][8] and for the realization of 1D and 2D focal plane arrays [9,10]. Here we report on the dynamic characterization of two types of AlGaN detectors: a MSM and a Schottky diode, under 193 nm excimer laser irradiation.…”

Characteristics of back-illuminated visible–blind UV photodetector based on AlxGa1−xN p–i–n photodiodes

“…However, the low-doping efficiencies typically associated with Al x Ga 1Àx N layers having high aluminum content can limit the fabrication of heavily doped p-type and n-type layers [7,8]. Even though these difficulties exist, several groups have reported promising results for the development of UV photodetectors, including such devices as photoconductors [9,10], Schottky photovoltaic detectors [11][12][13], p-n and p-i-n photodetectors [3,14,15], metal-semiconductor-metal (MSM) photodetectors [2,16], avalanche photodiodes [17] and phototransistors [18]. Among these devices, p-i-n photodetector structures are especially attractive, because they are compact, consume less power, are rugged and reliable, and can easily be integrated with other electronic circuitry.…”