AlGaN/GaN HEMT Based Biosensor for Detection of the HER2 Antigen Spiked in Human Serum

Mishra, Saroj Kumar; Kachhawa, Pharyanshu; Mondal, Prasenjit; Ghosh, Surajit; Tripura, Chaturvedula; Chaturvedi, Nidhi

doi:10.1109/ted.2022.3184658

Cited by 7 publications

(8 citation statements)

References 40 publications

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“…Figure 1 shows a biosensor with a common AlGaN/GaN structure [ 25 ]. The epitaxial wafer is typically grown by metal oxide chemical vapor deposition (MOCVD), with an Ohmic contact-type source and drain electrodes, and a Schottky contact metal stack at the gate terminal.…”

Section: Structure and Mechanismmentioning

confidence: 99%

“…And the cancer can induce the overexpression of HER2 [ 40 , 41 ], which indicates that HER2 can be used as a prognostic, predictive, and therapeutic marker in cancers. Enzyme-linked immunosorbent assay [ 42 , 43 ], immunohistochemistry [ 25 ], and fluorescent in situ hybridization [ 25 ] are available to detect the overexpression of HER2. However, the above method is time-consuming, requires a strict environment, and is labor intensive.…”

Section: Applications Of Algan/gan Hemt-based Biosensorsmentioning

confidence: 99%

“…Mishra et al reported an AlGaN/GaN HEMT-based biosensors to detect HER2 using the enzyme-linked immunosorbent assay (ELIAS) [ 25 ]. The structure of the biosensor is shown in Figure 1 a, which is discussed in Section 2 .…”

Section: Applications Of Algan/gan Hemt-based Biosensorsmentioning

confidence: 99%

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Review of the AlGaN/GaN High-Electron-Mobility Transistor-Based Biosensors: Structure, Mechanisms, and Applications

Li,

Chen,

Wang

2024

Micromachines

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Due to its excellent material performance, the AlGaN/GaN high-electron-mobility transistor (HEMT) provides a wide platform for biosensing. The high density and mobility of two-dimensional electron gas (2DEG) at the AlGaN/GaN interface induced by the polarization effect and the short distance between the 2DEG channel and the surface can improve the sensitivity of the biosensors. The high thermal and chemical stability can also benefit HEMT-based biosensors’ operation under, for example, high temperatures and chemically harsh environments. This makes creating biosensors with excellent sensitivity, selectivity, reliability, and repeatability achievable using commercialized semiconductor materials. To synthesize the recent developments and advantages in this research field, we review the various AlGaN/GaN HEMT-based biosensors’ structures, operations mechanisms, and applications. This review will help new researchers to learn the basic information about the topic and aid in the development of next-generation of AlGaN/GaN HEMT-based biosensors.

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Section: Structure and Mechanismmentioning

confidence: 99%

Section: Applications Of Algan/gan Hemt-based Biosensorsmentioning

confidence: 99%

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Review of the AlGaN/GaN High-Electron-Mobility Transistor-Based Biosensors: Structure, Mechanisms, and Applications

Li,

Chen,

Wang

2024

Micromachines

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“…It is currently the most promising device for electronic biosensors. Ambacher and colleagues demonstrated that AlGaN/GaN heterostructures are highly sensitive to ions, polar liquids, hydrogen gas, and even biological materials [10][11][12][13][14]. magnetic resonance imaging (MRI) in the medical field, adulterant detection, environmental monitoring, pathogenic food bacteria detection, agriculture, and other biosensing applications have recently used laboratory-based conventional methods.…”

Section: Introductionmentioning

confidence: 99%

Dual gate AlGaN/GaN MOS-HEMT biosensor for electrical detection of biomolecules-analytical model

Mann¹,

Sharma²,

Rewari³

et al. 2023

Semicond. Sci. Technol.

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This paper proposes an analytical model for a Dual gate AlGaN/GaN MOS-HEMT biosensor for electrical detection of neutral species such as Biotin, Keratin, ChOx, and Zein. When only one subband is occupied and the AlGaN layer is assumed to have been fully ionized, the Fermi-Dirac statistic and 2D state density are used to produce a self-consistent calculation of the carrier density in the quantum well at the interface.It is done by analyzing the impact of biomolecule concentration by inserting a biomolecule of appropriate dielectric permittivity in the cavity area beneath the gate region. The impact of cavity length has been analyzed on the sensor's performance. The proposed device significantly changes the channel potential, transconductance, drain current, and threshold voltage.Dual gate structures offer superior resistance to short channel effects. Due to enhanced transport characteristics, high carrier mobility, drain current, and a variety of other factors, double gate MOS HEMT outperforms single gate MOS HEMT.The maximaltransconductance,drain on sensitivity, and the maximaldrain currentthat has been attained in this work is 0.017S, 0.22 and 0.129mA, respectively, for biomolecule concentration, Nb=3×10¹².Among all the biomolecules used in this study, Keratin has achieved the maximum shift in threshold voltage and transconductance of 0.4V and 0.016S. The increase in current for Keratin, Biotin, Zein, and ChOx is 0.67%, 78%, 17%, and 42%, respectively, from single to Dual gate AlGaN/GaN MOS-HEMT. SiO2, Al2O3, and HfO2oxides have been compared by filling them in the left side of the cavity. Dual gate AlGaN/GaN MOS-HEMT biosensor presents an opportunity to develop robust, low-cost, specific detection and analysis of neutral biomolecule.The analytical model provides good results for drain current according to the comparison of simulation and analytical model findings.

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“…Biosensors that use different chemical reactions to detect various biomolecules play a crucial role in biomedicine, bioprocessing, environmental, and industrial detection [1,2]. Presently, various techniques are employed for biomolecule detection in the market, including fluorescence detection, atomic absorption spectrometry, chromatography, electrochemical methods, and silicon-based field-effect transistors [3][4][5][6][7][8][9].…”

Section: Introductionmentioning

confidence: 99%

The study of N-polar GaN/InAlN MOS-HEMT and T-gate HEMT biosensors

Liu,

Ma,

Guo

et al. 2023

J. Phys. D: Appl. Phys.

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The sensing performance of N-polar GaN/InAlN MOS-HEMT biosensors for neutral biomolecules was investigated and compared with the Ga-polar MOS-HEMT and N-polar T-gate HEMT by numerical simulation. The results indicate that the N-polar GaN/InAlN MOS-HEMT biosensor has higher sensing sensitivity than the Ga-polar MOS-HEMT and N-polar T-gate HEMT biosensors. Furtherly, to improve the sensing performance of N-polar MOS-HEMT, the influence of cavity dimensions, GaN channel layer thickness, and InAlN back barrier layer thickness on device performance was investigated. It is demonstrated that the sensitivity of the biosensor increases as the cavity height decreases and the cavity length increases. Therefore, the sensing performance of the N-polar MOS-HEMT device will be enhanced by thinning the GaN channel layer thickness or increasing the InAlN back barrier thickness, which can be mainly attributed to the variation of the energy band structure and 2DEG concentration in the HEMT heterostructure. Finally, the highest sensitivity can be obtained for the N-polar MOS-HEMT with 6-nm-thick GaN channel layer, 30-nm-thick InAlN back barrier layer, and two 0.9-μm-long and 5-nm-high cavities. This work provides structural optimal design guidance for the N-polar HEMT biosensor.

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AlGaN/GaN HEMT Based Biosensor for Detection of the HER2 Antigen Spiked in Human Serum

Cited by 7 publications

References 40 publications

Review of the AlGaN/GaN High-Electron-Mobility Transistor-Based Biosensors: Structure, Mechanisms, and Applications

Review of the AlGaN/GaN High-Electron-Mobility Transistor-Based Biosensors: Structure, Mechanisms, and Applications

Dual gate AlGaN/GaN MOS-HEMT biosensor for electrical detection of biomolecules-analytical model

The study of N-polar GaN/InAlN MOS-HEMT and T-gate HEMT biosensors

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