2009
DOI: 10.1021/ma901851w
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Affinity of Polystyrene Films to Hydrogen-Passivated Silicon and Its Relevance to the Tg of the Films

Abstract: Qualitatively different thickness dependences have been observed in the glass transition temperature, T g , of polystyrene (PS) films supported by hydrogen-passivated silicon (H-Si). It has been suggested that upon annealing at high temperatures in air, the polymer/substrate interface of these films (i.e., PS/Si), though buried underneath the PS layer, might be oxidized, rendering the films a different polymer/ substrate interface (i.e., PS/SiO x -Si), which may account for the different thickness dependences … Show more

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Cited by 148 publications
(219 citation statements)
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References 35 publications
(77 reference statements)
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“…The non-zero thickness of the irreversibly adsorbed layer after short annealing above the bulk T g is in agreement with values of ∆ε(t = 0) smaller than ∆ε BULK by 20 − 30%, and with previous investigations [31][32][33] . Annealing, in fact, provokes the thickening of an adsorbed layer already formed during solvent evaporation and during the preannealing step, that is, already formed during the most commonly used annealing conditions.…”
Section: Impact Of Chain Immobilization On the Dielectric Functionsupporting
confidence: 91%
See 1 more Smart Citation
“…The non-zero thickness of the irreversibly adsorbed layer after short annealing above the bulk T g is in agreement with values of ∆ε(t = 0) smaller than ∆ε BULK by 20 − 30%, and with previous investigations [31][32][33] . Annealing, in fact, provokes the thickening of an adsorbed layer already formed during solvent evaporation and during the preannealing step, that is, already formed during the most commonly used annealing conditions.…”
Section: Impact Of Chain Immobilization On the Dielectric Functionsupporting
confidence: 91%
“…Such a scaling is in line with our ideas on the impact of interfacial layers, as the thickness of the Guiselin brushes scales with R g itself 29,33 . Regardless of the extent of the distribution of conformations and the kinetics of adsorption, the trends in Figure 4 are in agreement with the idea that ∆T g is proportional to the polymer interface width 43 , that is, the thickness of the interfacial layer with non-bulk density.…”
supporting
confidence: 88%
“…0 (R g ranging from 3 nm to 18 nm) was obtained, close to the one obtained by Fujii et al 25 for native oxide covered Si (h ads ≈ 0.47×R g ) and confirm that the longer the PS chains, the thicker the adsorbed layer as reported also by Housmans 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 in agreement with the work of Fujii. 26 For longer times, differences only arise when films are preannealed or not. The value of h res for pre-annealed films is always greater than for unannealed films.…”
Section: Resultsmentioning
confidence: 99%
“…We study the η eff of PS-HSi (hydrogen-terminated Si, it is more strongly adsorbed by PS than SiOx. 18 Figure 4 is the For the 3 nm films (circles), the data with M w below (above) 13.2 kg/ mol were taken at 90°C (120°C). The data of the 5 nm films (squares) were taken at 120°C.…”
Section: ■ Experimental Methodsmentioning
confidence: 99%