Advent of 2D Rhenium Disulfide (ReS₂): Fundamentals to Applications

Abstract

Rhenium disulfide (ReS2) is a two dimensional (2D) group VII transition metal dichalcogenide (TMD). It is attributed with structural and vibrational anisotropy, layer independent electrical and optical properties, and metal-free magnetism properties. These properties are unusual compared with more widely used group VI-TMDs e.g. MoS2, MoSe2, WS2 and WSe2. Consequently, it has attracted significant interest in recent years and is now being used for a variety of applications including solid state electronics, catalysis, and, energy harvesting and energy storage. It is anticipated that ReS2 has the potential to be equally used in parallel with isotropic TMDs from group VI for all known applications and beyond.Therefore, a review on ReS2 is very timely. In this first review on ReS2, we critically analyze the available synthesis procedures and their pros-cons, atomic structure and lattice symmetry, crystal structure and growth mechanisms with an insight to the orientation and architecture of domain and grain boundaries, decoupling of structural and vibrational properties, anisotropic electrical, optical and magnetic properties impacted by crystal imperfections, doping and adatoms adsorptions, and the contemporary applications in different areas.

Growth of Wafer-Scale ReS2 with “Tunable” Geometry toward Electron Field-Emission Application

“…The observed two most prominent Raman lines at 165 and 229 cm −1 are assigned to the two vibration modes of Re atoms, for example, first order in-plane (E g ) and typically outof-plane (A 1g -like), respectively. 1,2,6 It is worth to noting that these two peak positions do not change by varying T s , which is because of a weak interlayer coupling between nearby layers and is reasonably consistent with the previous reports on ReS 2 . 1,6,23 In addition, other Raman modes in the range of 100−500 cm −1 are observed because of the distorted 1T structure and symmetry splitting of ReS 2 .…”

ReS2/WSe2 Type II Heterojunction Phototransitors with Integrated van der Waals Electrodes to Achieve Ultralow Dark Current and Fast Response Time

“…Figure e shows the PL spectra obtained by focusing the light onto the individual WSe 2 and ReS 2 regions as well as the overlap region of the ReS 2 /WSe 2 heterojunction. The individual WSe 2 and ReS 2 show strong excitonic emissions at ∼766 nm (1.62 eV) and ∼837 nm (1.48 eV), respectively, in agreement with previous reports. − The PL intensities of WSe 2 and ReS 2 are influenced by various factors, such as the energy-band structure, fluorescence quantum efficiency, crystalline quality, exciton formation, and decay mechanisms of the materials. The PL intensity of WSe 2 is much higher than the PL intensity of ReS 2 .…”

High-κ Dielectric on ReS2: In-Situ Thermal Versus Plasma-Enhanced Atomic Layer Deposition of Al2O3

“…Figure 1c provides a view of the crystalline structure of the ReS 2 , and shows that the four Re atoms are arranged in a diamond-like shape and form atomic chains. The atomic structure confirms the distorted 1T phase, as suggested by previous investigations [20,36,45]. The TEM data show the presence of only one dominant distorted 1T phase in the ReS 2 flakes.…”