Advances in thermoelectric AgBiSe2: Properties, strategies, and future challenges

Jang, Hanhwi; Jung, Yeon Sik; Oh, Min-Wook

doi:10.1016/j.heliyon.2023.e21117

Heliyon

2023

DOI: 10.1016/j.heliyon.2023.e21117

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Advances in thermoelectric AgBiSe2: Properties, strategies, and future challenges

Hanhwi Jang,

Yeon Sik Jung,

Min-Wook Oh

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2024

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Cited by 3 publications

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Copper Intercalation Effect on Thermoelectric Performance of Pristine Tin Selenide

Bharthaniya,

Chaudhari,

Agarwal

et al. 2024

Cryst. Res. Technol.

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Pristine tin selenide (SnSe) and copper (Cu) doped SnSe single crystals are grown by direct vapour transport technique. The energy dispersive X‐ray, X‐ray diffraction and Raman spectroscopic analysis of grown crystals show preferred stoichiometry having a single phase othorhombic SnSe. The electrical conductivity of SnSe and Cu doped SnSe are 24.24 and 106.06 S m−1 at 310 K respectively which increase as temperature increases. Carrier concentration of grown single crystals are evaluated by the Hall effect. Lattice thermal conductivity of pristine SnSe is 0.61 W mK−1, that decreased by copper doping to 0.44 W mK−1 at 310 K and for both the crystals it shows decrement as temperature increases to 483 K. Seebeck coefficient of the grown SnSe and Cu doped SnSe are positive and obtained values are 536.44 and 492.90 µV K−1 respectively at 310 K that confirm the p‐type semiconducting nature. Power factor, Figure of merit and thermoelectric compatibility factor of grown pristine SnSe is 0.25 × 108 µV mK−2, 0.005 and 0.02 Volt−1 respectively and shows improvement in Cu doped SnSe, i.e., 0.08 × 108 µV mK−2, 0.017 and 0.07 Volt−1 respectively at 310 K. This shows Cu doping in SnSe makes it an effective thermoelectric device contender.

show abstract

Copper Intercalation Effect on Thermoelectric Performance of Pristine Tin Selenide

Bharthaniya,

Chaudhari,

Agarwal

et al. 2024

Cryst. Res. Technol.

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Application Potential of Pnp‐Switching Semiconductors

Deng,

Hoffmann,

Nilges

2024

Zeitschrift anorg allge chemie

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Materials with tunable properties are often in the focus of materials science. Up to this point four different semiconducting materials and substitution variants have been found that are capable of switching between p‐ and n‐type conduction by a simple change in temperature. In this review, we illustrate previous findings of these pnp‐switching materials and current developments in functional implementations. While in the past decade, the scientific focus was primarily on discovering new materials that possess this intriguing switching effect, recently the first devices were successfully constructed and tested. Using the compounds, Ag18Cu3Te11Cl3 and AgCuS, that exhibit the pnp‐switching behaviour at approximately room temperature and 364 K, respectively, two single‐material diodes were developed and characterized. The approach for inducing this effect is denoted and the fundamental principles for realizing these devices are summarized.

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Enhancing n-type PbTe thermoelectric performance through Cd alloying and strategic defects management

Chen,

Li,

Chen

et al. 2024

Journal of Alloys and Compounds

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Advances in thermoelectric AgBiSe2: Properties, strategies, and future challenges

Cited by 3 publications

References 118 publications

Copper Intercalation Effect on Thermoelectric Performance of Pristine Tin Selenide

Copper Intercalation Effect on Thermoelectric Performance of Pristine Tin Selenide

Application Potential of Pnp‐Switching Semiconductors

Enhancing n-type PbTe thermoelectric performance through Cd alloying and strategic defects management

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