2022
DOI: 10.1002/cnma.202200301
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Advances and Challenges of AgSbSe2‐based Thermoelectric Materials

Abstract: Thermoelectric materials have aroused wide attention because of the capability to directly convert heat into electricity. AgSbSe2 is a structural analogue of PbTe but does not contain toxic element Pb or expensive element Te. Besides, it possesses both high Seebeck coefficient and inherently low thermal conductivity, making AgSbSe2 a competitive candidate for mid‐temperature thermoelectric power generation. This review summarizes the most recent updates of AgSbSe2‐based thermoelectric compounds. It starts with… Show more

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Cited by 7 publications
(17 citation statements)
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“…, κ tot ≤ 0.46 W m −1 K −1 ) due to the high disorder of the Ag/Sb position and the large lattice anharmonicity. 36 MnSe has a higher κ tot than AgSbSe 2 , whose κ tot is 3.4 W m −1 K −1 at 300 K. After MnSe alloying, the κ tot of (AgSbSe 2 ) 1− x (MnSe) x shows a weak change until the appearance of the high thermal conductivity secondary phase ( i.e. , precipitates of MnSe).…”
Section: Resultsmentioning
confidence: 97%
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“…, κ tot ≤ 0.46 W m −1 K −1 ) due to the high disorder of the Ag/Sb position and the large lattice anharmonicity. 36 MnSe has a higher κ tot than AgSbSe 2 , whose κ tot is 3.4 W m −1 K −1 at 300 K. After MnSe alloying, the κ tot of (AgSbSe 2 ) 1− x (MnSe) x shows a weak change until the appearance of the high thermal conductivity secondary phase ( i.e. , precipitates of MnSe).…”
Section: Resultsmentioning
confidence: 97%
“…# 0.46 W m −1 K ) due to the high disorder of the Ag/Sb position and the large lattice anharmonicity. 36 MnSe has a higher k tot than AgSbSe 2 , whose k tot is 3.4 W m −1 K −1 at 300 K. Aer MnSe alloying, the k tot of (AgSbSe 2 ) 1−x (MnSe) x shows a weak change until the appearance of the high thermal conductivity secondary phase (i.e., precipitates of MnSe). Specically, the k tot of (AgSbSe 2 ) 0.8 (MnSe) 0.2 is 0.47 W m −1 K −1 (or 0.37 W m −1 K −1 ), compared to 0.46 W m −1 K −1 (or 0.38 W m −1 K −1 ) at 300 K (or 750 K) for AgSbSe 2 .…”
Section: Resultsmentioning
confidence: 99%
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“…The combination of its intrinsically low κ and appropriate energy band structure makes AgSbSe 2 an ideal candidate for TE applications. Nevertheless, the main drawback of AgSbSe 2 is its moderate σ associated with an insufficient charge carrier concentration (10 16 –10 18 cm –3 ) at room temperature . Thus, the TE performance of AgSbSe 2 can be enhanced considerably by increasing the carrier concentration and properly engineering its electronic band structure …”
Section: Introductionmentioning
confidence: 99%