Advanced excimer-based crystallization systems for production solutions

Simon, Frank; Brune, J.; Herbst, Ludolf

doi:10.1016/j.apsusc.2005.07.092

Cited by 8 publications

(4 citation statements)

References 6 publications

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“…For instance, in order to crystallise an area of 0.166 mm², a laser fluence of 118 mJ/cm² was required for ELA whereas in the case of APP-ELA, the same effect was achieved when applying a laser fluence of 74 mJ/cm². In commercial industrial scale, ELA is performed by using laser pulses with a pulse energy of 1,050 mJ at a repetition rate of 300 Hz and a crystallisation speed of 28 cm 2 /s [1]. This corresponds to a laser power of 315 W. For the presented APP-ELA method, crystallisation can already be achieved at a laser power of 196 W, corresponding to a reduction factor of 1.6.…”

Section: Discussionmentioning

confidence: 99%

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Increase in Generation of Poly-Crystalline Silicon by Atmospheric Pressure Plasma-Assisted Excimer Laser Annealing

Gredner¹,

Gerhard²,

Wieneke³

et al. 2013

JMSE-B

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Abstract:In this work, a novel atmospheric pressure plasma-assisted excimer laser annealing method for increasing the generation efficiency of poly-crystalline silicon from amorphous silicon layers is presented. Here, both the plasma and the laser propagate coaxially in order to generate energetic synergies. The influence of different process gases and plasma discharge modes as well as the working distance were investigated. Depending on the particularly applied plasma, the crystalline area was increased by a factor of approx. 1.1 to 1.9, where the highest efficiency was observed when introducing an argon plasma beam to the annealing process.

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Section: Discussionmentioning

confidence: 99%

“…Here, amorphous silicon (α-Si), which is gained from gaseous silane (SiH 4 ), is deposited onto a glass substrate. This α-Si layer is then converted into polycrystalline silicon (p-Si) in order to fabricate semiconducting channels [1].…”

Section: Introductionmentioning

confidence: 99%

Increase in Generation of Poly-Crystalline Silicon by Atmospheric Pressure Plasma-Assisted Excimer Laser Annealing

Gredner¹,

Gerhard²,

Wieneke³

et al. 2013

JMSE-B

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“…After a dehydrogenation process at 450 C for 2 h, the sample was irradiated at a Lambda Physik LPX 300 excimer laser system using only two shots of a laser with a beam size of 1:6 Â 1:6 mm 2 by the sequential lateral solidification (SLS) growth technique. 6) The lateral crystallization after completely melting the film in well-defined areas with sharp transitions between liquid and solid silicon produces larger grains than vertical crystallization seeded using solid silicon at the Si-substrate interface owing to near-complete melting (line beam excimer laser annealing). The grain size is about 0:5 Â 3 m 2 , with 50-nm-thick poly-Si on a glass substrate, as shown in Fig.…”

Section: Device Fabricationmentioning

confidence: 99%

p-Type Tunneling Transistors with Polycrystalline Silicon by Sequential Lateral Solidification Growth Technique

Lee

Weng

2012

Jpn. J. Appl. Phys.

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In this paper we present the results of the modelling of the spraying of liquid metal which solidifies on an arbitrary surface and of the subsequent growth of the deposit. The new, two-dimensional continuous model consists of a definition of the source involved in the spraying process, the kinetics of points on an arbitrary substrate, including their visibility and the spray's sticking efficiency, and the redefinition of a new surface on the completion of every iteration step. A simple merging procedure is developed to reconnect parts of a curve which become too close during spraying. This procedure produces closed voids, called macro pores, in the deposited material. The model can also predict porosity distribution in the deposited material, defined here as a continuous function of the spray's parameters. The model has been applied in several cases when a spray's parameters were varied, the most important parameter being the spraying angle. The influence of this parameter on shape evolution was determined. The porosity distribution function was calculated for every set of input parameters, and its relationship to the shape evolution was established. With these results one can predict the running strategy in real experiments, in order to optimize the filling efficiency for filling of different initial shapes with sprayed material and to minimize the forming of macro pores.

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“…Excimer laser annealing ͑ELA͒ is a very suitable method for LTPS TFT production due to its ability to crystallize silicon films at low temperatures. 13 However, LTPS using ELA has a limitation due to high surface roughness as a result of repeated melting and crystallization of the silicon film during laser irradiation. In order to reduce leakage current due to quantum mechanical tunneling 14 and improve the driving current, the physical thickness of the dielectric layer should be thicker than silicon dioxide and have a high dielectric constant ͑k͒.…”

mentioning

confidence: 99%

Programming and Erasing Operations of Nitride-Nitride-Oxynitride Stacked Thin Film Transistor Device

Kim¹,

Son²,

Jung³

et al. 2011

J. Electrochem. Soc.

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We investigated the programming and erasing operations of low temperature polycrystalline silicon thin film transistors ͑TFTs͒ including a nitride-nitride-oxynitride ͑NNOn͒ structure for a new nonvolatile memory application. From capacitance-voltage characteristics, we found that high hysteresis performance was induced by the optical energy bandgap and thickness of each functional layer consisting of tunneling, trapping, and blocking. As the TFTs performed programming and erasing operations, a large memory window observed from the V G − I D transfer curve was caused by electron and hole injection through a thin tunneling layer of oxynitride ͑SiO x N y ͒. We also achieved a low driving voltage and short time duration for programming and erasing operations. Our results, based on retention evaluation, showed suitable operation performance after 10 4 s.Low temperature polycrystalline silicon ͑LTPS͒ thin film transistors ͑TFTs͒ fabricated on glass have been widely investigated to make use of applications such as liquid crystal displays 1 ͑LCDs͒ and active matrix organic light emitting displays 2 because they have an advantage over hydrogenated amorphous silicon ͑a-Si:H͒ TFTs in terms of higher driving on-current and field-effect mobility. For system-on-panel ͑SOP͒ applications, 3 LTPS TFTs have recently been studied for utilization in the fabrication of gate drivers, 4 digital-to-analog converters, 5 current drivers, 6 and memory. 7 Low power consumption of a device plays a very important role in integration with a SOP circuit. It is reported that nonvolatile memory ͑NVM͒ is widely used in mobile electronic devices due to its low power consumption. 8 Especially, p-type LTPS TFT circuits were reported to have more reliable characteristics against hot-carrier degradation than n-type LTPS TFTs. 9 When an image is displayed for a fast frame time, the power consumption is gradually increased because a continuous data driver signal should be supplied in the pixel array. 10 To overcome high power consumption, the embedded technology of dynamic memory on the glass substrate has been improved. 11,12 Although the dynamic memory is able to overcome the problem of power consumption, it has still remained a problem like the fluctuation of the data driver signal after receiving an input signal. Excimer laser annealing ͑ELA͒ is a very suitable method for LTPS TFT production due to its ability to crystallize silicon films at low temperatures. 13 However, LTPS using ELA has a limitation due to high surface roughness as a result of repeated melting and crystallization of the silicon film during laser irradiation. In order to reduce leakage current due to quantum mechanical tunneling 14 and improve the driving current, the physical thickness of the dielectric layer should be thicker than silicon dioxide and have a high dielectric constant ͑k͒. However, high-k gate dielectric materials should be similar bandgap energy with silicon dioxide and thermally stable without the formation of silicide with metal. With formed SiN x O y film as a t...

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Advanced excimer-based crystallization systems for production solutions

Cited by 8 publications

References 6 publications

Increase in Generation of Poly-Crystalline Silicon by Atmospheric Pressure Plasma-Assisted Excimer Laser Annealing

Increase in Generation of Poly-Crystalline Silicon by Atmospheric Pressure Plasma-Assisted Excimer Laser Annealing

p-Type Tunneling Transistors with Polycrystalline Silicon by Sequential Lateral Solidification Growth Technique

Programming and Erasing Operations of Nitride-Nitride-Oxynitride Stacked Thin Film Transistor Device

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