Adhesion effect of interface layers on pattern fabrication with GeSbTe as laser thermal lithography film

Deng, Changmeng; Geng, Yaoxiang; Wu, Yiqun; Wang, Yang; Wei, Jinsong

doi:10.1016/j.mee.2012.08.018

Cited by 16 publications

(4 citation statements)

References 22 publications

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“…It is also a frequently used inorganic phase-change photoresist for micro-/nanofabrication due to the different etching rates between amorphous (GST a ) and crystallized (GST c ) phases (Fig. 5h ) 58 . As illustrated in Fig.…”

Section: Resultsmentioning

confidence: 99%

Sub-wavelength patterned pulse laser lithography for efficient fabrication of large-area metasurfaces

Huang

Yuan

et al. 2022

Nat Commun

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Rigorously designed sub-micrometer structure arrays are widely used in metasurfaces for light modulation. One of the glaring restrictions is the unavailability of easily accessible fabrication methods to efficiently produce large-area and freely designed structure arrays with nanoscale resolution. We develop a patterned pulse laser lithography (PPLL) approach to create structure arrays with sub-wavelength feature resolution and periods from less than 1 μm to over 15 μm on large-area thin films with substrates under ambient conditions. Separated ultrafast laser pulses with patterned wavefront by quasi-binary phase masks rapidly create periodic ablated/modified structures by high-speed scanning. The gradient intensity boundary and circular polarization of the wavefront weaken diffraction and polarization-dependent asymmetricity effects during light propagation for high uniformity. Structural units of metasurfaces are obtained on metal and inorganic photoresist films, such as antennas, catenaries, and nanogratings. We demonstrate a large-area metasurface (10 × 10 mm2) revealing excellent infrared absorption (3–7 μm), which comprises 250,000 concentric rings and takes only 5 minutes to produce.

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Section: Resultsmentioning

confidence: 99%

Sub-wavelength patterned pulse laser lithography for efficient fabrication of large-area metasurfaces

Huang

Yuan

et al. 2022

Nat Commun

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“…Figure shows a schematic of such a procedure of fabricating laser-induced PVDF-TrFE ferroelectric micropatterns. For the localized heat generation, we employed a 30 nm thick amorphous GST layer which has been widely used for optical information storage. − Heat is readily produced in the GST film upon exposure of 650 nm focused laser, followed by phase transformation of the film from amorphous to crystalline state. − Different optical transmittance of the two phases allows one to read and write information. We employed the localized heat from GST to develop micropatterns of ferroelectric polymer.…”

Section: Resultsmentioning

confidence: 99%

Laser-Induced Nondestructive Patterning of a Thin Ferroelectric Polymer Film with Controlled Crystals using Ge₈Sb₂Te₁₁ Alloy Layer for Nonvolatile Memory

Bae

Kim

Hwang

et al. 2014

ACS Appl. Mater. Interfaces

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We present a simple but robust nondestructive process for fabricating micropatterns of thin ferroelectric polymer films with controlled crystals. Our method is based on utilization of localized heat arising from thin Ge(8)Sb(2)Te(11) (GST) alloy layer upon exposure of 650 nm laser. The heat was generated on GST layer within a few hundred of nanosecond exposure and subsequently transferred to a thin poly(vinylidene fluoride-co-trifluoroethylene) film deposited on GST layer. By controlling exposure time and power of the scanned laser, ferroelectric patterns of one or two microns in size are fabricated with various shape. In the micropatterned regions, ferroelectric polymer crystals were efficiently controlled in both degree of the crystallinity and the molecular orientations. Nonvolatile memory devices with laser scanned ferroelectric polymer layers exhibited excellent device performance of large remnant polarization, ON/OFF current ratio and data retention. The results are comparable with devices containing ferroelectric films thermally annealed at least for 2 h, making our process extremely efficient for saving time. Furthermore, our approach can be conveniently combined with a number of other functional organic materials for the future electronic applications.

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“…Chalcogenide phase change thin films are typical materials that have been used in the technique. For example, Shintani et al used Ge 2 Sb 2 Te 5 thin films as thermal materials and obtained small mark arrays [14], Cheng et al explored the etching selectivity at different acid developer accordingly [15][16][17]. Li et al used AgInSbTe as thermal lithography material and obtained uniform and regular patterns [18,19].…”

Section: Introductionmentioning

confidence: 99%

Manipulation of heat-diffusion channel in laser thermal lithography

Wei¹,

Wang²,

Wu³

2014

Opt. Express

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Laser thermal lithography is a good alternative method for forming small pattern feature size by taking advantage of the structural-change threshold effect of thermal lithography materials. In this work, the heat-diffusion channels of laser thermal lithography are first analyzed, and then we propose to manipulate the heat-diffusion channels by inserting thermal conduction layers in between channels. Heat-flow direction can be changed from the in-plane to the out-of-plane of the thermal lithography layer, which causes the size of the structural-change threshold region to become much smaller than the focused laser spot itself; thus, nanoscale marks can be obtained. Samples designated as "glass substrate/thermal conduction layer/thermal lithography layer (100 nm)/thermal conduction layer" are designed and prepared. Chalcogenide phase-change materials are used as thermal lithography layer, and Si is used as thermal conduction layer to manipulate heat-diffusion channels. Laser thermal lithography experiments are conducted on a home-made high-speed rotation direct laser writing setup with 488 nm laser wavelength and 0.90 numerical aperture of converging lens. The writing marks with 50-60 nm size are successfully obtained. The mark size is only about 1/13 of the focused laser spot, which is far smaller than that of the light diffraction limit spot of the direct laser writing setup. This work is useful for nanoscale fabrication and lithography by exploiting the far-field focusing light system.

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Adhesion effect of interface layers on pattern fabrication with GeSbTe as laser thermal lithography film

Cited by 16 publications

References 22 publications

Sub-wavelength patterned pulse laser lithography for efficient fabrication of large-area metasurfaces

Sub-wavelength patterned pulse laser lithography for efficient fabrication of large-area metasurfaces

Laser-Induced Nondestructive Patterning of a Thin Ferroelectric Polymer Film with Controlled Crystals using Ge₈Sb₂Te₁₁ Alloy Layer for Nonvolatile Memory

Manipulation of heat-diffusion channel in laser thermal lithography

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Adhesion effect of interface layers on pattern fabrication with GeSbTe as laser thermal lithography film

Cited by 16 publications

References 22 publications

Sub-wavelength patterned pulse laser lithography for efficient fabrication of large-area metasurfaces

Sub-wavelength patterned pulse laser lithography for efficient fabrication of large-area metasurfaces

Laser-Induced Nondestructive Patterning of a Thin Ferroelectric Polymer Film with Controlled Crystals using Ge8Sb2Te11 Alloy Layer for Nonvolatile Memory

Manipulation of heat-diffusion channel in laser thermal lithography

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Laser-Induced Nondestructive Patterning of a Thin Ferroelectric Polymer Film with Controlled Crystals using Ge₈Sb₂Te₁₁ Alloy Layer for Nonvolatile Memory